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Circuit simulation in ADRC is focused on integration of external driver especially gate driver and charge amplifier using a-Si:H TFT and Poly-Si TFT. The output of integration circuits are affect by lack of a-Si:H TFT stability or unuinformity of Poly-Si TFT. We study new compensation circuit to improve the unstable operation.
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Gate driver using a-Si:HTFT
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Inverter
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Ring oscilator
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- OLEDs fabricated with LTPS technology suffer from non-uniform brightness problems due to threshold voltage variations which are caused by eximer laser annealing of poly- Si materials. a-Si:H TFTs also suffer from serious problems due to threshold voltage shifts in response to a gate bias during OLED operation.
To overcome this several methods, such as voltage modulation driving, current programming technology and digital modulation have been reported. We study new circuits to compensate for the lack of aSi:H TFT stability and un-uniformity of poly-Si TFT.
[4] J.C. Goh et al., “A New a-Si:H Thin-Film Transister Pixel Circuit for Active-Matrix Organic Light-Emitting Diodes”,
IEEE Elect. Dev. Lett., vol. 24, pp. 583-585, 2003.
