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- 1) Suhui Lee, Minhyuk Choi, and Jin Jang. "Highly Stable, Self-Aligned Coplanar A-InGaZnO TFTs with Oxide and Hydrogenated Amorphous Si Contacts." IEEE Electron Device Letters (2023): 1.
- 2) Junyeong Kim, Heonbang Lee, and Jin Jang. "Emission Gate Driver with Five Low-Temperature Poly-Si Oxide TFTs without Capacitor for Narrow-Bezel AMOLED Display." IEEE Solid-state Circuits Letters 6 (2023): 53-56.
- 3) Yeoungjin Chang, Ravindra Naik Bukke, Youngoo Kim, Kiwan Ahn, Jinbaek Bae, and Jin Jang. "High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlOx Gate Insulator by Spray Pyrolysis." Electronics (Basel) 12.3 (2023): 688.
- 4) Chang Hoon Jeon, Ji Woong Park, Byung Wook Kang, Su Hyuk Jang, Kyung Joon Kwon, Soon Kwang Hong, Yong Min Ha, and Jin Jang. "Analysis of Heat Diffusion considering Driving Images on 6-inch Flexible AMOLED Display." Journal of Information Display 24.3 (2023): 169-75.
- 5) Sunaina Priyadarshi, Mohammad Masum Billah, Taebin Lim, Sadia Sayed Urmi, and Jin Jang. "Reduced Dynamic Gate Pulse Stress Instability in Dual Gate A-InGaZnO Thin Film Transistors." IEEE Electron Device Letters 44.3 (2023): 428-31.
- 6) Md Mehedi Hasan, Samiran Roy, Mohit, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, and Jin Jang. "High Performance, Amorphous InGaZnO Thin-film Transistors with Ferroelectric ZrO2 Gate Insulator by One Step Annealing." Applied Surface Science 611 (2023): 155533.
- 7) Jinbaek Bae, Arqum Ali, Chanju Park, and Jin Jang. "High‐performance, Coplanar Amorphous InGaZnO Thin‐film Transistors by Spray Pyrolysis on Polyimide Substrate for Low‐cost Manufacturing of Foldable Active‐matrix Organic Light Emitting Diode Display." Journal of the Society for Information Display 31.5 (2023): 308-15.
- 8) Taebin Lim, Jiseob Lee, Dong Yeon Woo, Joon Young Kwak, and Jin Jang. "Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering." Small Methods 7.9 (2023): E2300251.
- 9) Md. Hasnat Rabbi, Arqum Ali, Chanju Park, and Jin Jang. "High Performance Amorphous In0.5Ga0.5O Thin-Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application." Advanced Electronic Materials (2023): Advanced Electronic Materials, 2023.
- 10) Chanju Park, Junyeong Kim, and Jin Jang. "Pressure Mapping with Piezoresistive Sensor on Oxide TFTs Backplane." IEEE Electron Device Letters 44.8 (2023): 1304-307. Web. 5) Narendra Naik Mude, Ravindra Naik Bukke and Jin Jang, “Transparent, P‐Channel CuISn Thin‐Film Transistor with Field Effect Mobility of 45 cm2 V–1 s–1 and Excellent Bias Stability.” Advanced Materials Technologies, vol. 7, no. 8, 2022, p. n/a. 10.1002/admt.202101434
- 11) Jinbaek Bae, Arqum Ali, Md Mobaidul Islam, Myeonggi Jeong, Chanju Park, and Jin Jang. "As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability." ACS Applied Materials & Interfaces 15.33 (2023): 39494-9504.
- 12) Yeoungjin Chang, Ravindra Naik Bukke, Jinbaek Bae, and Jin Jang. "Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor." Nanomaterials (Basel, Switzerland) 13.17 (2023): 2410.
- 13) Junyeong Kim, Heonbang Lee, Myeonggi Jeong, Jinbaek Bae, Chanju Park, and Jin Jang. "Micro-LED Pixel Circuit Using Low-Temperature Poly-Si Oxide TFTs With Fast Rise and Fall Times of Pulse Width Modulation for Low Gray Expression." IEEE Electron Device Letters 44.9 (2023): 1.
- 14) Sunaina Priyadarshi, Abidur Rahaman, Mohammad Masum Billah, Sabiqun Nahar, and Jin Jang. "A Compact DC-DC Converter Using Low-Temperature Poly-Si Oxide Thin-Film Transistors." IEEE Electron Device Letters 44.10 (2023): 1640-643.
- 15) Arqum Ali, Md. Mobaidul Islam, Jinbaek Bae, and Jin Jang. "Low-Cost and High-Performance, Back-Channel Etched InGaZnO Thin Film Transistors by Spray Pyrolysis." IEEE Electron Device Letters 44.10 (2023): 1632-635.
- 16) Chanju Park, Junyeong Kim, Heonbang Lee, Junmi Lee, Md Mobaidul Islam, Hansol Jeong, and Jin Jang. "Biaxially Stretchable Active-Matrix Micro-LED Display with Liquid Metal Interconnects." Advanced Materials Technologies (2023): Advanced Materials Technologies, 2023.
- 17) Taebin Lim, Jae Heon Lee, Donggyu Kim, Jinbaek Bae, Seungchae Jung, Sang Mo Yang, Joon I Jang, and Jin Jang. "Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory." Advanced Materials (Weinheim) (2023): E2308301.
- 18) Christophe Avis, and Jin Jang. “Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors.” Materials, vol. 16, no. 22, 2023, p. 7172.
- 19) Jiseob Lee, Keunwoo Kim, Jiyeong Shin, Sanggun Choi, Sunhee Lee, and Jin Jang, "ZrAlOx by Spray Pyrolysis as Gas Barrier for Oxide TFTs on Flexible Substrates." IEEE Transactions on Electron Devices (Early Access).
- 1) Jiseob Lee, Suhui Lee, Md Mobaidul Islam and Jin Jang, “Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin-Film Transistors by Introducing Amorphous ZrAlOx Interlayer.” Advanced Engineering Materials, vol. 24, no. 4, 2022, pp. Advanced engineering materials, 2022, Vol.24 (4), Article 2100957. 10.1002/adem.202100957
- 2) Christophe Avis, Jin Jang, “Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits.” Membranes (Basel), vol. 12, no. 1, 2022, p. 7. 10.3390/membranes12010007
- 3) Abidur Rahaman, Apurba Adhikary, Mohammad Amzad Hossain, Md Mobaidul Islam and Jin Jang, “Enhanced Current Mirror Circuit by Dual‐Gate Coplanar Amorphous InGaZnO TFTs.” International Journal of Circuit Theory and Applications, vol. 50, no. 3, 2022, pp. 1015–1020. 10.1002/cta.3198
- 4) Suhui Lee, Young Joo Cho, Byungju Han, Jaeseob Lee, Sanggun Choi, Taewook Kang, Hye Yong Chu, Jinoh Kwag, Sung Chul Kim and Jin Jang, “Poly‐Si Thin‐Film Transistors on Polyimide Substrate for 1 Mm Diameter Rollable Active‐Matrix Organic Light‐Emitting Diode Display.” Advanced Engineering Materials, vol. 24, no. 3, 2022, p. n/a. 10.1002/adem.202100910
- 5) Narendra Naik Mude, Ravindra Naik Bukke and Jin Jang, “Transparent, P‐Channel CuISn Thin‐Film Transistor with Field Effect Mobility of 45 cm2 V–1 s–1 and Excellent Bias Stability.” Advanced Materials Technologies, vol. 7, no. 8, 2022, p. n/a. 10.1002/admt.202101434
- 6) Md Mehedi Hasan, Mohit, Md Mobaidul Islam, Ravindra Naik Bukke, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim and Jin Jang, “Improvement of Amorphous InGaZnO Thin-Film Transistor with Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment.” IEEE Electron Device Letters, vol. 43, no. 5, 2022, pp. 725–728. 10.1109/LED.2022.3162325
- 7) Md. Hasnat Rabbi, Suhui Lee, Daichi Sasaki,Emi Kawashima, Yuki Tsuruma and Jin Jang, “Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V‐1 s‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays.” Small Methods, vol. 6, no. 9, 2022, pp. e2200668-n/a. 10.1002/smtd.202200668
- 8) Chanju Park, Munsu Choi, Suhui Lee, Hyunho Kim, Taeheon Lee, Mohammad Masum Billah, Byunglib Jung and Jin Jang, “Highly Sensitive, Stretchable Pressure Sensor Using Blue Laser Annealed CNTs.” Nanomaterials (Basel, Switzerland), vol. 12, no. 13, 2022, p. 2127. 10.3390/nano12132127
- 9) Junyeong Kim, and Jin Jang. “Gate Driver with Low‐Temperature Polycrystalline Silicon and Oxide Thin‐Film‐Transistor Circuits for Low Power Consumption and Narrow Bezel AMOLED Displays.” Journal of the Society for Information Display, vol. 30, no. 5, 2022, pp. 482–488. 10.1002/jsid.1132
- 10) Junyeong Kim, Myeonggi Jeong, Byeonggwan Kim and Jin Jang, “A 38μm-Pitch, 3-Output Gate Driver Using Low-Temperature Poly-Si Oxide TFTs for High Resolution Display.” IEEE Electron Device Letters, vol. 43, no. 9, 2022, pp. 1471–1474. 10.1109/LED.2022.3190498
- 11) Chang Hoon Jeon, Kyung Joon Kwon, Soon Kwang Hong, Yong Min Ha, Hyunho Kim and Jin Jang, “Study on Residual Image in Low-Temperature Poly-Si Oxide TFT-Based OLED Display on Polyimide Substrate.” IEEE Transactions on Electron Devices, vol. 69, no. 9, 2022, pp. 4958–4961. DOI: 10.1109/TED.2022.3188954
- 12) Md Mobaidul Islam, Md. Mehedi Hasan,Arqum Ali,Jinbaek Bae and Jin Jang, “Low Cost, Al2O3 and ZrAlOx Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors.” Advanced Materials Interfaces, vol. 9, no. 26, 2022, p. n/a. 10.1002/admi.202200906
- 13) Ravindra Naik Bukke, Narendra Naik Mude, Jinbaek Bae and Jin Jang, “Nano-Scale Ga2O3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors.” ACS Applied Materials & Interfaces, vol. 14, no. 36, 2022, pp. 41508–41519. 10.1021/acsami.2c08358
- 14) Jinbaek Bae, Arqum Ali and Jin Jang, “Spray Pyrolyzed Amorphous InGaZnO for High Performance, Self‐Aligned Coplanar Thin‐Film Transistor Backplanes.” Advanced Materials Technologies, vol. 8, no. 1, 2023, p. n/a. 10.1002/admt.202200726
- 15) Minhyuk Choi, Suhui Lee, Seongbok Kang, Seonhyang Jang, Abu Bakar Siddik and Jin Jang, “High Temperature Solid Phase Crystallization of a-Si on Glass by Short Time Blue Laser Exposure for Display Backplane.” IEEE Electron Device Letters, vol. 43, no. 11, 2022, pp. 1890–1893. 10.1109/LED.2022.3208832
- 16) Md Mehedi Hasan, Samiran Roy, Mohit, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim and Jin Jang, “High Performance, Amorphous InGaZnO Thin-Film Transistors with Ferroelectric ZrO2 Gate Insulator by One Step Annealing.” Applied Surface Science, vol. 611, 2023, p. 155533. 10.1016/j.apsusc.2022.155533
- 17) Maria Vasilopoulou, Wilson Jose da Silva, Anastasia Soultati, Hyeong Pil Kim, Byung Soon Kim, Youjin Reo, Anderson Emanuel Ximim Gavim, Julio Conforto, Fabio Kurt Schneider, Marciele Felippi, Leonidas C. Palilis, Dimitris Davazoglou, Panagiotis Argitis, Thomas Stergiopoulos, Azhar Fakharuddin, Jin Jang, Nicola Gasparini, Mohammad Khaja Nazeeruddin, Yong-Young Noh and Abd.Rashid bin Mohd Yusoff, “Photonic Nanostructures Mimicking Floral Epidermis for Perovskite Solar Cells.” Cell Reports Physical Science, vol. 3, no. 9, 2022, p. 101019. 10.1016/j.xcrp.2022.101019
- 18) Sadia Sayed Urmi, Mohammad Masum Billah, Sunaina Priyadarshi, Jinbaek Bae, Byunglib Jung, Suhui Lee, Keunwoo Kim, Jiyeong Shin, Sangun Choi, Junhyung Lim, Taewook Kang, Changhee Lee and Jin Jang, “Highly Robust Flexible Poly-Si Thin Film Transistor Under Mechanical Strain with Split Active Layer for Foldable Active-Matrix Organic Light Emitting Diode Display.” IEEE Electron Device Letters, vol. 44, no. 1, 2023, pp. 80–83. 10.1109/LED.2022.3225863
- 19) Hansai Ji, Di geng, Xichen Chuai, Xinlv Duan, Qian Chen, Wanming Wu, Chuanke Chen, Wenfeng Jiang, Jin Jang and Ling Li, “An Advanced Full Adder Based Arithmetic Logic Unit (ALU) Using Low-Temperature Poly-Si Oxide TFTs.” IEEE Transactions on Electron Devices, vol. 69, no. 11, 2022, pp. 6160–6165. 10.1109/TED.2022.3208074
- 20) Taebin Lim, Suhui Lee, Jiseob Lee, HyungJin Choi, Byunglib Jung, SeungHyub Baek and Jin Jang, “Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.” Advanced Functional Materials, vol. 33, no. 8, 2023, p. n/a. 10.1002/adfm.202212367
- 21) Taebin Lim, Jinbaek Bae, Byungju Han, Arqum Ali and Jin Jang, “Artificial Synaptic InGaZnO Thin-Film Transistor with Long Retention Behavior Using Al2O3/SiO2 Gate Insulator.” IEEE Transactions on Electron Devices, vol. 70, no. 1, 2023, p. 135. 10.1109/TED.2022.3224419
- 1) Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Dong Kil Yim, Soo Young Choi, Jian Liu, Daniel Severin, Markus Hanika, Marcus Bender and Jin Jang, “High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility”, Advanced Electronic Materials, 7(3), pp: 2000896/1-11 (2021.01.20, Wiley-VCH GmbH, Germany) [2199-160X]
- 2) Ho-young Jeong, Seung-hee Nam, Kwon-shik Park, Hyun-chul Choi and Jin Jang, “Finding the cause of degradation of low-temperature oxide thin-film transistors”, Journal of the Korean Physical Society, 78(4), pp: 284-289 (2021.01.20, Korean Physical Society, KR) [1976-8524]
- 3) Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Dong Kil Yim, Soo Young Choi, Jian Liu, Daniel Severin, Markus Hanika, Marcus Bender and Jin Jang, “High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility”, Advanced Electronic Materials, 7(3), pp: 2000896/1-11 (2021.01.20, Wiley-VCH GmbH, Germany) [2199-160X]
- 4) Christophe Avis, Mohammad Masum Billah, Youn Goo Kim, Abu Bakar Siddik, Jin Jang, “Analysis of the solution-processed a-SnOX and HfO2 interface for applications in thin-film transistors”, ACS Applied Electronic Materials, 3(2), 651-657 (2021.01.25, American Chemical Society, US) [1944-8244]
- 5) Youn Goo Kim, Ravindra Naik Bukke, Jiseob Lee, Jewel Kumer Saha and Jin Jang, “Formation of F-doped offset region for spray prolyzed self-aligned coplanar amorphous zinc–tin–oxide thin-film transistor by NF3 plasma treatment”, IEEE Transactions on Electron Devices, 68(3), pp: 1057-1062 (2021.01.26, IEEE, US) [0018-9383]
- 6) Jewel Kumer Saha, Arqum Ali, Ravindra Naik Bukke, Youn Goo Kim, Md Mobaidul Islam and Jin Jang, “Performance improvement for spray-coated ZnO TFT by F doping with spray-coated Zr–Al–O gate insulator”, IEEE Transactions on Electron Devices, 68(3), pp: 1063-1069 (2021.01.26, IEEE, US) [0018-9383]
- 7) Jingrui Guo, Ying Zhao, Guanhua Yang, Xichen Chuai, Wenhao Lu, Dongyang Liu, Qian Chen, Xinlv Duan, Shijie Huang, Yue Su, Di Geng, Nianduan Lu, Tao Cui, Jin Jang, Ling Li and Ming Liu, “Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT”, IEEE Transactions on Electron Devices, 68(4), pp: 2049-2055(2021.02.11, IEEE, US) [0018-9383]
- 8) Md. Mehedi Hasan, Chang Won Ahn, Tae Heon Kim and Jin Jang, “Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate”, Applied Physics Letters, 118(15), pp: 152901/1-9(2021.04.12, AIP, US) [0003-6951]
- 9) Hansol Jeong, Hyo-Min Kim, Jeonggi Kim, Wonkyeong Jeong, and Jin Jang*, “Highly robust, flexible top-emission organic light-emitting diode exhibiting stable performance under infolding of curvature radius of 0.32mm”, Advanced Engineering Materials, 23(7), pp: 2100045/1-7(2021.04.18, Wiley-VCH GmbH, Germany) [1438-1656]
- 10) Suhui Lee, Youngbin Do, Dongjin Kim and Jin Jang, “Extremely foldable LTPS TFT backplane using blue laser annealing for low‐cost manufacturing of rollable and foldable AMOLED display”, Journal of the Society for Information Display, pp: 382-389 (2021.05.05, SID, US) [1071-0922]
- 11) Narendra Naik Mude, Ravindra Naik Bukke and Jin Jang, “High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring”, ACS Applied Materials & Interfaces, 13(17), pp: 20277-20287 (2021.04.23, American Chemical Society, US) [1944-8244]
- 12) Narendra Naik Mude, Ravindra Naik Bukke, and Jin Jang “Solution-processed high performance of p-channel copper Tin-sulphur thin-film transistor”, Journal of Materials Chemistry C, 9(29), pp: 9188-9196 (2021.06.04, Royal Society of Chemistry, GB) [2050-7526]
- 13) Duk Young Jeong, Mohammad Masum Billah and Jin Jang, “Amorphous InGaZnO/Poly-Si coplanar heterojunction TFT for memory applications”, IEEE Electron Device Letters, 42(8), pp: 1172-1175 (2021.06.21, IEEE, US) [0741-3106]
- 14) Duk Young Jeong, Mohammad Masum Billah, Abu Bakar Siddik, Byungju Han, Yeoungjin Chang, and Jin Jang, “High performance dual gate blue laser annealed poly-si thin-film transistor for high-resolution displays”, IEEE Transactions on Electronic Devices, 68(8), pp: 3863-3869 (2021.07.05, IEEE, US) [0018-9383]
- 15) Christophe Avis and Jin Jang, “Influence of the curing and annealing temperatures on the properties of solution processed tin oxide thin films”, Crystals, 11(8), pp: 851-863 (2021.07.22, MDPI, Switzerland) [2073-4352]
- 16) Md Mobaidul Islam, Jewel Kumer Saha, Md. Mehedi Hasan, Junyeong Kim, Ravindra Naik Bukke, Arqum Ali, and Jin Jang, “Spray-pyrolyzed high-k zirconium-aluminum-oxide dielectric for high performance metal-oxide thin-film transistors for low power displays”, Advanced Materials Interfaces, 8(16), pp: 2100600/1-11 (2021.07.28, Wiley-VCH GmbH, Germany) [2196-7350]
- 17) Jewel Kumer Saha, Mohammad Masum Billah and Jin Jang, “Triple-stack ZnO/AlZnO/YZnO heterojunction oxide thin-film transistors by spray pyrolysis for high mobility and excellent stability”, ACS Applied Materials & Interfaces, 13(31), pp: 37350−37362 (2021.07.29, American Chemical Society, US) [1944-8244]
- 18) Maria Vasilopoulou, Abd. Rashid bin Mohd Yusoff, Matyas Daboczi, Julio Conforto, Anderson Emanuel Ximim Gavim, Wilson Jose da Silva, Andreia Gerniski Macedo, Anastasia Soultati, George Pistolis, Fabio Kurt Schneider, Yifan Dong, Polina Jacoutot, Georgios Rotas, Jin Jang, Georgios C. Vougioukalakis, Christos L. Chochos, Ji-Seon Kim and Nicola Gasparini, “High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence”, Nature Communications, 12(1), pp: 150947/1-10 (2021.08.11, Springer, Germany) [2041-1923]
- 19) Ravindra Naik Bukke, Narendra Naik Mude, Md. Mobaidul Islam and Jin Jang, “Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability”, Applied Surface Science, 568, pp: 150947/1-10 (2021.08.16, Elsevier, The Netherlands) [0169-4332]
- 20) Md Mehedi Hasan, Mohit, Jinbaek Bae, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, and Jin Jang, “High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis”, Appl. Phys. Lett., 119(9), pp: 093502/1-7 (2021.08.30, AIP, US) [0003-6951]
- 21) Chanju Park, Mohammad Masum Billah, Abu Bakar Siddik, Suhui Lee, Byungju Han, and Jin Jang, “High Voltage Amorphous InGaZnO TFT with F doped Drain Offset Structure”, IEEE Electron Device Letters, 42(10), pp: 1476-1479 (2021.08.31, IEEE, US) [0741-3106]
- 22) Junyeong Kim, Yuanfeng Chen, Suhui Lee, and Jin Jang, “A Novel Gate Driver Working Under Depletion Mode Oxide TFTs Using Low-Temperature Poly-Si Oxide TFTs”, IEEE Electron Device Letters, 42(11), pp: 1619-1622 (2021.09.03, IEEE, US) [0741-3106]
- 23) Arqum Ali, Jewel Kumer Saha, Abu Bakar Siddik, Md Mobaidul Islam, and Jin Jang, “Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors” Solid-State Electronics, 186, pp: 108178/1-7 (2021.09.11, ELSEVIER, UK) [0038-1101]
- 24) Mohammad Masum Billah, Md Hasnat Rabbi, Chanju Park, and Jin Jang, “Highly Sensitive Temperature Sensor Using Low-temperature Polysilicon Oxide Thin-film Transistors”, IEEE Electron Device Letters, 42(12), pp: 1864-1867 (2021.10.19, IEEE, US) [0741-3106]
- 25) Ravindra Naik Bukke and Jin Jang, “Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors”, RSC Advances, 11(54), pp: 34392-34401 (2021.10.25, Royal Society of Chemistry, UK) [2046-2069]
- 26) Jiseob Lee, Suhui Lee, Md Mobaidul Islam, and Jin Jang, “Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin-Film Transistors by Introducing Amorphous ZrAlOx Interlayer”, Advanced Engineering Materials, 24(4), pp: 2100957/1-8, (2021.10.29, Wiley-VCH GmbH, Germany) [1438-1656]
- 27) Md Mehedi Hasan, Eric Moyen, Jewel Kumer Saha, Md Mobaidul Islam, Arqum Ali and Jin Jang, “Solution processed high performance perovskite quantum dots/ZnO phototransistors”, Nano Research, 15(14), pp: 3660-3666 (2021.10.27, Springer, The Netherlands) [1998-0124]
- 28) Sunaina Priyadarshi, Mohammad Masum Billah, Hyunho Kim, Md. Hasnat Rabbi, Sadia Sayed Urmi, Suhui Lee and Jin Jang, “High-performance dual gate amorphous InGaZnO thin film transistor with top gate to drain offset”, IEEE Electron Device Letters, 43(1), pp: 56-59 (2021.11.18, IEEE, US) [0741-3106]
- 29) Junyeong Kim, Mohammad Masum Billah and Jin Jang, “Ultra-Low Power, Emission Gate Driver with Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors”, IEEE Electron Device Letters, 43(12), pp: 2101434/1-4 (2021.12.21, IEEE, US) [0741-3106]
- 1) Kim, H. M., Jeong, W., Kim, J. H., & Jang, J. (2020). Stability of quantum-dot light emitting diodes with alkali metal carbonates blending in mg doped zno electron transport layer. Nanomaterials, 10(12), 1–14. https://doi.org/10.3390/nano10122423
- 2) Saha, J. K., Bukke, R. N., & Jang, J. (2020). Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis. Advanced Electronic Materials, 6(12), 1–11. https://doi.org/10.1002/aelm.202000594
- 3) Rabbi, M. H., Billah, M. M., Siddik, A. B., Lee, S., Lee, J., & Jang, J. (2020). Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor with Split Active Layer by N2O Annealing. IEEE Electron Device Letters, 41(12), 1782–1785. https://doi.org/10.1109/LED.2020.3034119
- 4) Saha, J. K., Bukke, R. N., Mude, N. N., & Jang, J. (2020). Remarkable stability improvement of zno tft with al2o3 gate insulator by yttrium passivation with spray pyrolysis. Nanomaterials, 10(5). https://doi.org/10.3390/nano10050976
- 5) Kim, D., Billah, M. M., Lee, S., Siddik, A. B., Cho, Y. J., Jang, J., Lee, J., Lee, Y., & Shin, J. (2020). Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress. Advanced Engineering Materials, 2000901. https://doi.org/10.1002/adem.202000901
- 6) Chen, Y., Kim, H., Lee, J., Lee, S., Member, A., & Do, Y. (2020). TFTs for Ultrahigh-Definition AR / VR Displays. 1(11), 1–5.
- 7) Lee, H., Lee, S., Kim, Y., Siddik, A. B., Billah, M. M., Lee, J., & Jang, J. (2020). Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating. IEEE Electron Device Letters, 41(10), 1520–1523. https://doi.org/10.1109/LED.2020.3018750
- 8) Kim, Y. G., Lv, D., Huang, J., Bukke, R. N., Chen, H., & Jang, J. (2020). Artificial Indium-Tin-Oxide Synaptic Transistor by Inkjet Printing Using Solution-Processed ZrOx Gate Dielectric. Physica Status Solidi (A) Applications and Materials Science, 217(19), 1–8. https://doi.org/10.1002/pssa.202000314
- 9) Bukke, R. N., Saha, J. K., Mude, N. N., Kim, Y., Lee, S., & Jang, J. (2020). Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis. ACS Applied Materials and Interfaces, 12(31), 35164–35174. https://doi.org/10.1021/acsami.0c05151
- 10) Jeong, H. Y., Nam, S. H., Park, K. S., Yoon, S. Y., Park, C., & Jang, J. (2020). Significant performance and stability improvements of low-temperature IGZO TFTS by the formation of In-F nanoparticles on an SiO2 buffer layer. Nanomaterials, 10(6), 1–7. https://doi.org/10.3390/nano10061165
- 11) Saha, J. K., Bukke, R. N., Mude, N. N., & Jang, J. (2020). Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors. Scientific Reports, 10(1), 1–11. https://doi.org/10.1038/s41598-020-65938-6
- 12) Moyen, E., Kim, J. H., Kim, J., & Jang, J. (2020). ZnO Nanoparticles for Quantum-Dot-Based Light-Emitting Diodes. ACS Applied Nano Materials, 3(6), 5203–5211. https://doi.org/10.1021/acsanm.0c00639
- 13) Chen, Y., Lee, S., Kim, H., Lee, J., Geng, D., & Jang, J. (2020). In-pixel temperature sensor for high-luminance active matrix micro-light-emitting diode display using low-temperature polycrystalline silicon and oxide thin-film-transistors. Journal of the Society for Information Display, 28(6), 528–534. https://doi.org/10.1002/jsid.915
- 14) Islam, M. M., Saha, J. K., Bukke, R. N., Hasan, M. M., Billah, M. M., Mude, N. N., Ali, A., Jang, J., & Jang, J. (2020). Solution-Processed la Alloyed ZrOxHigh-k Dielectric for High-Performance ZnO Thin-Film Transistors. IEEE Electron Device Letters, 41(7), 1021–1024. https://doi.org/10.1109/LED.2020.2992264
- 15) Lee, S., Chen, Y., Kim, J., & Jang, J. (2020). Vertically integrated, double stack oxide TFT layers for high-resolution AMOLED backplane. Journal of the Society for Information Display, 28(6), 469–475. https://doi.org/10.1002/jsid.907
- 16) Rahaman, A., Jeong, H., & Jang, J. (2020). A High-Gain CMOS Operational Amplifier Using Low-Temperature Poly-Si Oxide TFTs. IEEE Transactions on Electron Devices, 67(2), 524–528. https://doi.org/10.1109/TED.2019.2958053
- 17) Jeong, D. Y., Chang, Y., Yoon, W. G., Do, Y., & Jang, J. (2020). Low-Temperature Polysilicon Oxide Thin-Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V−1. Advanced Engineering Materials, 22(4), 1–7. https://doi.org/10.1002/adem.201901497
- 18) Saha, J. K., Jang, J., Billah, M. M., Bukke, R. N., Kim, Y. G., Mude, N. N., Siddik, A. B., Islam, M. M., Do, Y., & Choi, M. (2020). Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric. IEEE Transactions on Electron Devices, 67(3), 1021–1026. https://doi.org/10.1109/TED.2020.2969958
- 19) Park, M., Vangelatos, Z., Rho, Y., Park, H. K., Jang, J., & Grigoropoulos, C. P. (2020). Comprehensive analysis of blue diode laser-annealing of amorphous silicon films. Thin Solid Films, 696(August 2019), 137779. https://doi.org/10.1016/j.tsf.2019.137779
- 20) Do, Y., Jeong, D. Y., Lee, S., Kang, S., Jang, S., & Jang, J. (2020). Remarkable Improvement in Foldability of Poly-Si Thin-Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly-Si Thin-Film Transistor Used for Foldable Displays. Advanced Engineering Materials, 22(5), 1–10. https://doi.org/10.1002/adem.201901430
- 21) Kim, Y., Kim, J., Kim, H. M., & Jang, J. (2020). Quantum-Dots Photosensor with Wide Bandgap P-Type and N-Type Oxide Semiconductors for High Detectivity and Responsivity. Advanced Materials Technologies, 5(1), 1–8. https://doi.org/10.1002/admt.201900857
- 22) Alehdaghi, H., Kanwat, A., Zirak, M., Moyen, E., Choi, W. C., & Jang, J. (2020). Quasi-2D organic cation-doped formamidinium lead bromide (FAPbBr3) perovskite light-emitting diodes by long alkyl chain. Organic Electronics, 79, 105626. https://doi.org/10.1016/j.orgel.2020.105626
- 23) Md. Mehedi Hasan , Md. Mobaidul Islam, Xiuling Li , Mingqian He, Robert Manley, J. C., & Nikolay Zhelev, Karan Mehrotra, and J. J. (2020). Interface Engineering With Polystyrene for. 67(4), 1751–1756.
- 1) Abidur Rahaman, Yuanfeng Chen, MD Mehedi Hasan and Jin Jang, “A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs” , Journal of the Electron Device Society, Volume 7, pp: 655-661 (2019. 06. 18)
- 2) Hyunho Kim, Duk Young Jeong, Suhui Lee, and Jin Jang, “A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors”, IEEE ELECTRON DEVICE LETTERS, VOL. 40, NO. 3, pp: 411-414 (2019. 1. 21 IEEE, US)
- 3) Christophe Avis, YounGoo Kim and Jin Jang, “Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors”, Materials 2019, 12, 3341 (2019. 10. 14 MDPI)
- 4) Diodes Mohammad Zirak, Eric Moyen,, Hassan Alehdaghi, Anil Kanwat, Won-Chul Choi, and Jin Jang, “Anion- and Cation-Codoped All-Inorganic Blue-Emitting Perovskite Quantum Dots for Light-Emitting Diodes”, ACS Appl. Nano Mater. 2019, 2, pp: 5655−5662 (2019.08.26, ACS Publications, American Chemical Society, US )
- 5) Minok Parka, Zacharias Vangelatosa, Yoonsoo Rhoa, H.K. Parkb, Jin Jangc, Costas P Grigoropoulosa, “Comprehensive analysis of blue diode laser-annealing of amorphous silicon films”, Thin Solid Films 696, 137779 (2019.12.27, Elsevier)
- 6) Anil Kanwat, Won-Chul Choi, Sudipta Seth and Jin Jang, “Doping and Photon Induced Defect Healing of Hybrid Perovskite Thin Films: An Approach Towards Efficient Light Emitting Diodes”, ACES (2019 Wiley, US)
- 7) Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Lai Zhao, Soo Young Choi, “Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors”, Journal of the Electron Device Society, Volume 7, pp: 503-511 (2019. 04. 22)
- 8) Mohamad Firdaus Mohamad Noh, Nurul Affiqah Arzaee , Javad Safaei , Nurul Aida Mohamed, Hyeong Pil Kim, Abd Rashid Mohd Yusoff , Jin Jang, Mohd Asri Mat Teridi, “Eliminating oxygen vacancies in SnO2 films via aerosol-assisted chemical vapour deposition for perovskite solar cells and photoelectrochemical cells”, Journal of Alloys and Compounds 773 (2019), pp:997-1008 (2018.09.25 Elsevier)
- 9) Jiseob Lee, Dongjin Kim, Suhui Lee, Johann Cho, Hyungryul Park, and Jin Jang, “High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress”, IEEE ELECTRON DEVICE LETTERS, VOL. 40, NO. 9, pp: 1443-1446 (2019. 6. 25 IEEE, US)
- 10) Ravindra Naik Bukke, Narendra Naik Mude, Jewel Kumer Saha, and Jin Jang, “High Performance of a-IZTO TFT by Purification of the Semiconductor Oxide Precursor”, Adv. Mater. Interfaces 2019, 6, 1900277 (2019 Wiley, US)
- 11) Abidur Rahaman , Duk Young Jeong, and Jin Jang, “High Speed and Wider Swing, Level Shifter Using Low-Temperature Poly-Silicon Oxide TFTs”, IEEE ELECTRON DEVICE LETTERS, VOL. 40, NO. 11, pp:1772-1775 (2019. 9. 16 IEEE, US)
- 12) Suhui Lee , Yuanfeng Chen, Jeonggi Kim, Hyomin Kim and Jin Jang, “Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting”, J Soc Inf Display, 2018, 27, pp: 507-513 (2019 Wiley, US)
- 13) Narendra Naik Mude, Ravindra Naik Bukke, Jewel Kumer Saha, Christophe Avis,* and Jin Jang, “Highly Stable, Solution-Processed Ga-Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment”, Adv. Electron. Mater. 2019, 1900768
- 14) Xiuling Li, Md. Mehedi Hasan , Hyo-Min Kim, and Jin Jang, “Oxide Electronics Transferred on Stiff-Stripe/ PDMS Substrate for High-Resolution Stretchable Displays”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 66, NO. 7,pp: 2071-2978 (2019. 6. 05 IEEE, US)
- 15) Yoseob Kim, Jeonggi Kim, Hyo-Min Kim, and Jin Jang, “Quantum-Dots Photosensor with Wide Bandgap P-Type and N-Type Oxide Semiconductors for High Detectivity and Responsivity”, Adv. Mater. Technol. 2019, 1900857
- 16) Hassan Alehdaghia, Anil Kanwatb,c, Mohammad Ziraka, Eric Moyenb*, Won-Chul Choib, Jin Jang, “Quasi-2D Organic Cation-Doped Formamidinium Lead Bromide (FAPbBr3) Perovskite Light-Emitting Diodes by Long Alkyl Chain, Organic Electronics, 6 January 2020
- 17) Yujin Lee, Hyo-Min Kim, Jeonggi Kim and Jin Jang, “Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers”, J. Mater. Chem. C, 2019, 7, pp: 10082—10091, (2019.06.25 Royal Society of Chemistry
- 18) Md Mehedi Hasan, Mohammad Masum Billah, Xiuling Li, and Jin Jang, “Robust Oxide Thin-Film Transistors with Embedded CNT Buried Layer for Stretchable Electronics”, IEEE ELECTRON DEVICE LETTERS (2019 IEEE, US)
- 19) Young Hun Jung, Seungpyo Hong, Suhui Lee, Seonghyun Jin, Tae-Woong Kim, Yeoungjin Changa,, Jin Jang, “Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors”, The Solid Films 681, pp: 93-97, (2019.04.18 Elsevier)
- 20) Hyo‐Min Kim, Misun Ryu, James H.J. Cha, Hyun Soo Kim, Tak Jeong and Jin Jang , “Ten micrometer pixel, quantum dots color conversion layer for high resolution and full color active matrix micro‐LED display”, J Soc Inf Display, 2019, 27(2019 Wiley, US)
- 1) Hyo-Min Kim, Jeonggi Kim, and Jin Jang, “Quantum-dot Light Emitting Diodes with Perfluorinated Inomer doped Copper-Nickel Oxide Hole Transporting Layer“, Nanoscale, 10, pp: 7281-7290 (2018.03.24 Royal Society of Chemistry, GB) [2040-3372]
- 2) Hyo-Min Kim, Sinyoung Cho, Jeonggi Kim, Hyeonjeong Shin, and Jin Jang, “Li and Mg Co-doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes“, ACS Appl. Mater. Interfaces, 10, pp: 24028-24036 (2018.06.28 American Chemical Society, US) [1944-8244]
- 3) Jeonggi Kim, Hyo-Min Kim, and Jin Jang, “Low Work Function 2.81 eV Rb2CO3-Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes“, ACS Appl. Mater. Interfaces, 10, pp: 18993-19001 (2018.03.11 American Chemical Society, US) [1944-8244]
- 4) Jeonggi Kim, Hyo-Min Kim, Sinyoung Cho, Christophe Avis, and Jin Jang, “High Hall Mobility P-type Cu2SnS3-Ga2O3 with a High Work Function“, Adv. Funct. Mater, 28, pp: 1802941 (2018.07 wiley, US) [2196-4095]
- 5) Jae Gwang Um and Jin Jang, “Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600°C “, Applied Physics Letters, 112, pp: 162104- (2018, AIP, US) [0021-8979])
- 6) Suhui Lee,Yuanfeng Chen, Jaekwon Jeon, Chanju Park and Jin Jang, “Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes “, Adv. Electo. Mater, 4, pp: 1700550- (2018, )
- 7) Md Mehedi Hasan, Mohammad Masum Billah, and Jin Jang, “Tensile Stress Effect on Performance of a-IGZO TFTs With Source/Drain Offsets“, IEEE ELECTRON DEVICE LETTERS, Vol. 39 No. 2, pp: 204-207 (2018.01.25 IEEE, US) [0741-3106]
- 8) Mohammad Masum Billah, Md Mehedi Hasan, and Jin Jang “Millisecond Stretched Exponential Recovery of Threshold Voltage for Mechanically Stressed Flexible a-IGZO Thin-Film Transistors“, IEEE ELECTRON DEVICE LETTERS, Vol. 39 No. 5, pp: 699-702 (2018.04.24 IEEE, US) [0741-3106]
- 9) Ravindra Naik Bukke, Christophe Avis , Mude Narendra Naik, and Jin Jang “Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator“, IEEE ELECTRON DEVICE LETTERS, Vol. 39 No. 3, pp: 371-374 (2018.02.22 IEEE, US) [0741-3106]
- 10) Abidur Rahaman, Mohammad Masum Billah, Jae Gwang Um, Md Mehedi Hasan, and Jin Jang “Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs“, IEEE ELECTRON DEVICE LETTERS, Vol. 39 No. 9, pp: 1318-1321 (2018.07.19 IEEE, US) [0741-3106]
- 11) Yuanfeng Chen, Di Geng, and Jin Jang “Integrated Active-Matrix Capacitive Sensor Using a-IGZO TFTs for AMOLED“, IEEE ELECTRON DEVICE SOCIETY, Vol. 06 No. --, pp: 214-218 (2018.01.26 IEEE, US) [2168-6734]
- 12) Anil Kanwat, Eric Moyen, Sinyoung Cho, and Jin Jang “Rubidium as an Alternative Cation for Efficient Perovskite Light Emitting Diodes“, ACS Applied Materials and Interfaces, Vol. -- No. --, pp: - (2018.04.28 ACS Publications, American Chemical Society, US) [1944-8244]
- 13) Anil Kanwat, Vasa S. Rani, and Jin Jang “Improved Power Conversion Efficiency of Perovskite Solar Cells using Highly Conductive WOx doped PEDOT:PSS“,New Journal of Chemistry , Vol.-- No.--, pp: -(2018.08.30 Royal Society of Chemistry, GB) [1369-9261]
- 14) Mohamad Firdaus Mohamad Noh,C. H. Teh,R. Daik, E. L. Liam, C. C. Yap, M. A. Ibrahim, N. A. Ludin, A. R. B. M. Yusoff, Jin Jang, and M. A. M. Teridi “The architecture of the electron transport layer for a Perovskite Solar Cell“, Journal of Material Chemistry C , Vol.-- No.06, pp:682-712 (2017.11.24 Royal Society of Chemistry, GB) [1369-9261]
- 15) Hyeong Pil Kim, Abd. Rashid bin Mohd Yusoff and Jin Jang “Polystyrene enhanced crystallization of Perovskites towards high performance Solar Cells“, Nanoscale Advances, Vol.-- No.--, pp:- (2018.08.29 Royal Society of Chemistry, GB) [1369-9261]
- 1) Di Geng, Songyi Han, Heejae Seo, Mallory Mativenga, and Jin Jang, “Piezoelectric Pressure Sensing Device Using Top-Gate Effect of Dual-Gate a-IGZO TFT“, IEEE SENSORS JOURNAL, 17, pp: 585-586 (2017. 02, IEEE, USA) [0741-3106]
- 2) Suhui Lee. Jiyeong Shin and Jin Jang, " Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer“, Advanced Functional Materials, 10.1002/adfm.201604921 (2017.02, wiley, US) [2196-4095]
- 3) Hyeong Pil Kim, Jeongmo Kim, Byung Soon Kim, Hyo-Min Kim, Jeonggi Kim, Abd. Rashid bin Mohd Yusoff, Jin Jang, and Mohammad Khaja Nazeeruddin, " High-Efficiency, Blue, Green, and Near-Infrared Light-Emitting Diodes Based on Triple Cation Perovskite“, Advanced Optical Materials, DOI: 10.1002/adom.201600920 (2017.02, wiley, US) [2196-4095]
- 4) Mohammad Masum Billah and Jin Jang, " Millisecond Positive Bias Recovery of Negative Bias Illumination Stressed Amorphous InGaZnO Thin-Film Transistors“, IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 4, (2017.04, IEEE, US) [0741-3106]
- 5) Di Geng, Yuan Feng Chen, M. Mativenga and Jin Jang, “Touch sensor array with integrated drivers and computer using a-IGZO TFTs”, IEEE Electron Device Letters, 38(3), pp: 391-394 (2017.03, IEEE, US)[0741-3106]
- 6) Seung-Hun Lee, Taehun Kim, Jihun Lee, Christophe Avis and Jin Jang, “Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation”, Applied Physics Letters, 110(12), pp: 122102/1-5 (2017.03.20, AIP Publishing, US) [0003-6951]
- 7) Young Chul Park, Jae Gwang Um, Mallory Mativenga and Jin Jang, “Enhanced operation of back-channel-etched a-IGZO TFTs by fluorine treatment during source/drain wet-etching”, ECS Journal of Solid State Science and Technology, 6(5), pp: 300-303 (2017.04.05, ECS, US) [2162-8769]
- 8) Woo-Sul Shin, Hyun-A Ahn, Jun-Seok Na, Seong-Kwan Hong, Oh-Kyong Kwon, Ji-Hun Lee, Jae-Gwang Um, Jin Jang, Sung-Hwan Kim and Jeong-Soo Lee, “A driving method of pixel circuit using a-IGZO TFT for suppression of threshold voltage shift in AMLED displays”, IEEE Electron Device Letters, 38(6), pp: 760-762 (2017.06, IEEE, USA) [0741-3106]
- 9) Mohammad Masum Billah, Md Mehedi Hasan and Jin Jang, “Effect of tensile and compressive bending stress on electrical performance of flexible a-IGZO TFTs”, IEEE Electron Device Letters, 38(7), pp: 890-893 (2017.07, IEEE, USA) [0741-3106]
- 10) Md Mehedi Hasan, Mohammad Masum Billah, Mude Narendra Naik, Jae Gwang Um and Jin Jang, “Bending stress induced performance change in plastic oxide thin-film transistor and recovery by annealing at 300℃”, IEEE Electron Device Letters, 38(8), pp: 1035-1038 (2017.08, IEEE, USA) [0741-3106]
- 11) Suhui Lee, Daun Jeong, Mallory Mativenga and Jin Jang, “Highly robust bendable oxide thin-film Ts on polyimide substrates via mesh and strip patterning of device layers”, Advanced Functional Materials, 27(29), pp: 1700437/1-9 (2017.08.04, WILEY-VCH Verlag GmbH & Co., Germany) [1616-301X]
- 12) Hyeong-Pil Kim, Moojin Kim, Kyoung-Bo Kim, Hayk Khachatryan and Jin Jang, “Properties of atmospheric hydrogen-plasma-treated CH3NH3PbI3 perovskite films”, Surface & Coatings Technology, 330, pp: 228-233 (2017.09.28, Elsevier, The Netherlands) [0257-8972]
- 13) Mallory Mativenga, Haeyeon Jun, Younwoo Choe, Jaekwang Um and Jin Jang, “Circular structure for high mechanical bending stability of a-IGZO TFTs”, Journal of the Electron Devices Society, 5(6), pp: 453-457 (2017.09.13, IEEE, US) [2168-6734]
- 14) Hyo-Min Kim, Jeonggi Kim, Sin-Young Cho and Jin Jang, “Solution-processed metal-oxide p−n charge generation junction for high-performance inverted quantum-dot light-emitting diodes”, ACS Applied Materials & Interfaces, 9(44), pp: 38678-38686 (2017.10.18, American Chemical Society, US) [1944-8244]
- 15) Hayk Khachatryan, Hyeong-Pil Kim, Sung-Nam Lee, Han-Ki Kim, Moojin Kime, Kyoung-Bo Kim and Jin Jang, “Novel method for dry etching CH3NH3PbI3 perovskite films utilizing atmospheric-hydrogen-plasma”, Materials Science in Semiconductor Processing, 75, pp: 1-9 (2011.11.11, Elsevier, The Netherlands) [1369-8001]
- 16) Hassan Alehdaghi, Maziar Marandi, Azam Irajizad, Nima Taghavinia, Jin Jang and Hakimeh Zare, “Investigating the different conditions on solution processed MoOx thin film in long lifetime fluorescent polymer light emitting diodes”, Materials Chemistry and Physics, 204 pp: 262-268 (2017.10.24, Elsevier, The Netherlands) [0254-0584] (2017-2018)
- 17) Jin-Yeong Park, Seungpyo Hong, Jin Jang, and Han-Ki Kim “Blue Laser Annealing of Ag Nanowire Electrodes for Flexible Thin Film Heaters”, ECS Journal of Solid State Science and Technology, 6(10), pp: 746-751 (2017.11.08, ECS, US) [2162-8769]
- 18) Jae Kwon Jeon, Jae Gwang Um, Suhui Lee, Jin Jang, “Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT”, AIP Advances, 7, pp: 125110/1-7 (2017.12.12, AIP Publishing, US) [2050-7526]
- 1) Abd. Rashid Bin, Mohd Yusoff and Jin Jang, “Highly efficient photoelectrochemical water splitting by a hybrid tandem perovskite solar cell “, Chem. Commun,527, pp: 5824-5827 (2016, Royal Society of Chemistry, GB) [2046-2069]
- 2) Jeongmo Kim, Hee Ryung Lee, Hyeong Pil Kim, Tengda Lin, Anil Kanwat, Abd. Rashid bin Mohd Yusoff and Jin Jang, " Effects of UV-ozone irradiation on copper doped nickel acetate and its applicability to perovskite solar cells “, Nanoscale, (2016.03, Royal Society of Chemistry, GB) [2046-2069]
- 3) Hyeong Pil Kim, Seung Joo Lee, Abd Rashid bin Mohd Yusoff and Jin Jang, " A high performance organic photovoltaic utilizing PEDOT:PSS and graphene oxide", RSC Advances, 6, pp: 28599-28606 (2035.03. Royal Society of Chemistry, GB) [2046-2069]
- 4) Seonghyun Jin, Younwoo Choe, Suhui Lee, Tae-Woong Kim, Mallory Mativenga and Jin Jang, " Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs", IEEE Electron Device Letters, 37(3), pp: 291-293 (2016.03, IEEE, USA) [0741-3106]
- 5) Abd. Rashid bin Mohd Yusoff, Mohd Asri Mat Teridi and Jin Jang, " Null current hysteresis for acetylacetonate electron extraction layer in perovskite solar cells", Nanoscale, 8, pp: 6328-6334 (2016, Royal Society of Chemistry, GB) [2046-2069]
- 6) P. Goutham Raj, V. Sandhya Rani, Anil Kanwat, Jin Jang, " Enhanced organic photovoltaic properties via structural modifications in PEDOT:PSS due to graphene oxide doping", Materials Research Bulletin, 74, pp: 346-352 (2016, Elsevier, The Netherlands) [1566-1199]
- 7) Ravindra Naik Bukke, Christophe Avis, Md Delwar Hossain Chowdhury, Taehun Kim, Tengda Lin and Jin Jang, "Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by UV/O3 treatment on zirconium oxide gate insulator", Japanese Journal of Applied Physics, 55, pp: 03CC02
- 8) Ravindra Naik Bukke, Christophe Avis and Jin Jang, " Solution-Processed Amorphous In-Zn-Sn Oxide Thin-Film Transistor Performance Improvement by Solution-Processed Y2O3 Passivation", IEEE ELECTRON DEVICE LETTERS, 37(4), pp: 433-436 (2016.04, IEEE, USA) [0741-3106]
- 9) Youn Goo Kim, Taehun Kim, Christophe Avis, Seung-Hun Lee and Jin Jang, " Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga Doping", IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(3), pp: 1078-1084 (2016.04, IEEE, USA) [0018-9383]
- 10) Yong-Hwan Kim, Eunji Lee, Jae Gwang Um, Mallory Mativenga and Jin Jang, "Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics", Scientific Reports, 6, pp: 25734-1-8 (2016.05.11, Nature) [2045-2322]
- 11) Mohammad Masum Billah, Md Delwar Hossain Chowdhury, Mallory Mativenga Jae Gwang Um, Ravi K. Mruthyunjaya, Gregory N. Heiler, Timothy John Tredwell and Jin Jang, "Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation", Electron Device Letters, (2016.05, IEEE, USA) [0018-9383]
- 12) Jin Jang, "Bulk-Accumulation Oxide-TFT Backplane Technology for Flexible and Rollable AMOLED Displays: Part I", Information of display, Frontline technology
- 13) Tengda Lin, Xiuling Li, and Jin Jang, "High performance p-type NiOx thin-film transistor by Sn doping", Applied Physics Letters, (2016.06, AIP, US) [0021-8979]
- 14) Minkyu Chun, Jae Gwang Um, Min Sang Park, Md Delwar Hossain Chowdhury, and Jin Jang, "Effect of top gate potential on bias-stress for dual gate amorphous indium-galliumzinc-
oxide thin film transistor", AIP Advances, 6, pp: 075217 (2016.07, AIP, US) [0021-8979]
- 15) Jeonggi Kim, Hui Joon Park, Costas P. Grigoropoulos, Daeho Lee and Jin Jang, "Solution-processed nickel oxide nanoparticles with NiOOH for hole injection layers of high-efficiency organic light-emitting diodes", Nanoscale, 8, pp: 17608 (2016, Royal Society of Chemistry, GB) [2046-2069]
- 16) Hyo-Min Kim, Di Geng, Jeonggi Kim, Eunsa Hwang, and Jin Jang, "Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes", ACS Appl. Mater. Interfaces, 8, pp: 28727-28736 (2016, ACS Publications, US) [1944-8244]
- 17) Chang Hoon Jeon, Jae Gwang Um, Mallory Mativenga, and Jin Jang, "Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs", Electron Device Letters, 37, pp: 1450 (2016.05, IEEE, USA) [0018-9383]
- 18) Mohammad Masum Billah, Md Mehedi Hasan, Minkyu Chun, and Jin Jang, "TCAD Simulation of Dual-Gate a-IGZO TFTs With Source and Drain Offsets", Electron Device Letters, 37, pp: 1442 (2016. IEEE, USA) [0018-9383]
- 19) Anil Kanwat and Jin Jang, "High work function with reduced phase separation of PSS in metal oxide modified PEDOT:PSS interlayers for organic photovoltaics", RSC Advances, 6, pp: 114800 (2016.12, Royal Society of Chemistry, GB) [2046-2069]
- 20) Abd. Rashid bin Mohd. Yusoff, Hyeong Pil Kim, Xiuling Li, Jeongmo Kim, Jin Jang, and Mohammad Khaja Nazeeruddin, "Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters", Adv. Mater, pp: 1602940 (2016.12, wiley, US) [2196-4095]
- 21)Yuanfeng Chen, Di Geng, Tengda Lin, Mallory Mativenga, Jin Jang, "Full-Swing Clock Generating Circuits on Plastic Using a-IGZO Dual-Gate TFTs With Pseudo-CMOS and Bootstrapping", Electron Device Letters, (2016.05, IEEE, USA) [0018-9383
- 1) Mallory Mativenga, Di Geng, Byoungsoon Kim and Jin Jang, “Fully transparent and rollable electronics“, ACS Applied Materials & Interfaces, 7, pp: 1578-1585 (2015, ACS Publications, American Chemical Society) [1944-8244]
- 2) Anil Kanwat, William Milne and Jin Jang, "Vertical phase separation of PSS in organic photovoltaics with a nickel oxide doped PEDOT:PSS “, Solar Energy Materials & Solar Cells, 132, pp: 623-631 (2015.01, Elsevier, The Netherlands) [0927-0248]
- 3) Seung Joo Lee, Byung Soon Kim, Jae-Yeon Kim, Abd. Rashid bin Mohd Yusoff and Jin Jang, "Stable organic photovoltaic with PEDOT:PSS and MoOX mixture anode interfacial layer without encapsulation", Organic Electronics, 19, pp: 140-146 (2015.01.28, Elsevier, The Netherlands) [1566-1199]
- 4) Yuanfeng Chen, Di Geng, Mallory Mativenga, Hyoungsik Nam and Jin Jang, "High-speed pseudo-CMOS circuits using bulk accumulation a-IGZO TFTs", IEEE Electron Device Letters, 36(2), pp: 153-155 (2015.02, IEEE, USA) [0741-3106]
- 5) Seung Joo Lee, Jae-Yeon Kim, Abd. Rashid bin Mohd Yusoff and Jin Jang, "Plasmonic organic solar cell employing Au NP:PEDOT:PSS doped rGO", RSC Advances, 5, pp: 23892-23899 (2015, Royal Society of Chemistry, GB) [2046-2069]
- 6) Mohd Asri Mat Teridi, Mehran Sookhakian, Wan Jefrey Basirun, R. Zakaria, Fabio Kurt Schneider, Wilson Jose da Silva, Jaeyeon Kim, Seung Joo Lee, Hyeong Pil Kim, Abd. Rashid bin Mohd Yusoff and Jin Jang, "Plasmon enhanced organic devices utilizing highly ordered nanoimprinted gold nanodisks and nitrogen doped graphene", Nanoscale, 7, pp: 7091-7100 (2015.01.08, The Royal Society of Chemistry, England) [2040-3364]
- 7) Md Delwar Hossain Chowdhury, Mallory Mativenga, Jae Gwang Um, Ravi K. Mruthyunjaya, Gregory N. Heiler, Timothy John Tredwell and Jin Jang, "Effect of SiO2 and SiO2/SiNx passivation on the stability of amorphous indium-gallium zinc-oxide thin-film transistors under high humidity", IEEE Transactions on Electron Devics, 62(3), pp: 869-874 (2015.02.02, IEEE, USA) [0018-9383]
- 8) Hyeong Pil Kim, Seung Joo Lee, Abd. Rashid bin Mohd Yusoff and Jin Jang, "Improvement of conversion efficiency of inverted organic photovoltaic with PEDOT:PSS:Wox by thermal annealing", IEEE Journal of Photovoltaics, 5(3), pp: 897-902 (2015.03.30, IEEE, US) [2156-3381]
- 9) Chan-Yong Jeong, Daeun Lee, Sang-Hun Song, Jong In Kim, Jong-Ho Lee, Jae-Gwang Um, Jin Jang and Hyuck-In Kwon, "Properties of bottom and top channel interfaces in doulbe-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors", Journal of Vacuum Science & Technology, 33(3), pp: 030603/1-5 (2015.04.28, American Vacuum Society, US) [2166-2746]
- 10) Jae Kwang Um, Suhui Lee, Seonghyun Jin, Mallory Mativenga, Se Yun Oh, Choong Hun Lee and Jin Jang, "Hihg-peroformance homojunction a-IGZO TFTs with selectively defined low-resistive a-IGZO source/drain electrodes", IEEE Trnnsactions on Electron Devices, 62(7), pp: 2212-2218 (2015.05.19, IEEE, USA) [0018-9383]
- 11) Minkyu Chun, Md Delwar Hossain Chowdhury and Jin Jang, "Semiconductor to metallic transition in bulk accumulated amorphous indiumgallium-
zinc-oxide dual gate thin-film transistor", AIP ADVANCES, 5(5), pp: 057165/1-6 (2015.05.29, AIP, US) [2158-3226]
- 12) Piero Migliorato, Md Delwar Hossain Chowdhury, Jae Gwang Um, Manju Seok, Mallory Mativenga and Jin Jang, "Characterization and modeling of a-IGZO TFTs", Journal of Display Technology, 11(6), pp: 497-505 (2015.06.03, IEEE, US) [1551-319X]
- 13) Seung Joo Lee, Hyeong Pil Kim, Abd. Rashid bin Mohd Yusoff and Jin Jang, "Understanding the role of organic polar solvent induced nanoscale morphology and electrical evolutions of P3HT:PCBM composite film", Organic Electronics, 25, pp: 50-56 (2015.06.10, Elsevier, The Netherlands [1566-1199]
- 14) Jae Gwang Um, Mallory Mativenga, Piero Migliorato, and Jin Jang, "Channel length dependence of negative-bias-illumination-stress in amorphous-indiumgallium-zinc-oxide thin-film transistors", Journal of Applied Physics, 117, pp: 234502/1-7 (2015.06.17, AIP, US) [0021-8979]
- 15) Jae-Yeon Kim, Abd. Rashid bin Mohd. Yusoff and Jin Jang, "Quantum-dot light-emitting diode featuring polymeric metal oxide anode buffer layer", IEEE Journal of Selected Topics in Quantum Electronics, 21(4), pp: 1900206 (2015.07. 08, IEEE, USA) [1077-206X]
- 16) Abd. Rashid bin Mohd Yusoff, Dongcheon Kim, Fabio Kurt Schneider, Wilson Jose da Silva and Jin Jang, "Au-doped single layer graphene nanoribbons for a record-high efficiency ITO-free tandem polymer solar cell", Energy & Environment Science, 8, pp: 1523-1537 (2015.03.11, The Royal Society of Chemistry, England) [2040-3364]
- 17) Xiuling Li, Mohammad Masum Billah, Mallory Mativenga, Di Geng, Yong-Hwan Kim, Tae-Woong Kim, Young-Gug Seol, and Jin Jang, "Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation", JIEEE ELECTRON DEVICE LETTERS, 36(8), pp: 811-813 (2015.06.22, IEEE, USA) [1077-206X]
- 18) Di Geng, Yuan Feng Chen, Mallory Mativenga and Jin Jang, "30 μm-Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays", IEEE ELECTRON DEVICE LETTERS, 36(8), pp: 805-807 (2015.08. IEEE, USA) [0741-3106]
- 19) Seung Joo Lee, Jae Yeon Kim, Hyeong Pil Kim, Dongcheon Kim, Wilson Jose da Silva, Fabio Kurt Schneider, Abd. Rashid bin Mohd Yusoff and Jin Jang, "An organic photovoltaic featuring graphene nanoribbons", Chemical Communication, 51, pp: 9185-9188 (2015.05. 21 The Royal Society of Chemistry, England) [2040-3364]
- 20) Tongfa Liu, Dongcheon Kim, Hongwei Han, Abd. Rashid bin Mohd Yusoff and Jin Jang, “Fine-tuning optical and electronic properties of graphene oxide for highly efficient perovskite solar cells”, Nanoscale, 7, pp: 10708-10718 (2015.05.14, The Royal Society of Chemistry, England) [2040-3364]
- 21) Zhiwei Zhong, Ling Li, Jin Jang, Nianduan Lu and Ming Liu, "Analytical surface-potential compact model for amorphous-IGZO thin-film transistors", Journal of Applied Physics, 117, pp: 215705/1-5 (2015.06.05, AIP, USA) [0021-8979]
- 22) Y. C. Park, J. G. Um, M. Mativenga and J. Jang, "Modification of electrod-enchant for sidewall profile control and reduced back-channel corrosion of inverted-staggered metal-oxide TFTs", ECS Journal of Solid State Science and Technology, 4(12), pp: Q124-Q129 (2015.10.10, ECS, USA) [2162-8769] 사사: 경희대학교
- 23) Hyo-Min Kim, Jeonggi Kim, Jieun Lee and Jin Jang, “Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p‑Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer”, ACS Appl. Mater. Interfaces, 7, pp: 24592-24560 (2015.10.22, ACS Publications, American Chemical Society) [1944-8244]
- SCI1) Ho-young Jeong, Bok-young Lee, Young-jang Lee, Jung-il Lee, Myoung-su Yang, In-byeong Kang, Mallory Mativenga and Jin Jang, “Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer“, Applied Physics Letters, 104, pp: 022115/1-5 (2014.01.17, AIP Publishing LLC, USA) [0003-6951]
- SCI2) Sejin Hong, Suhui Lee, Mallory Mativenga and Jin Jang, “Reduction of negative bias and light instability of a-IGZO TFTs by dual-gate driving“, IEEE Electron Device Letters, 35(1), pp: 93-95 (2014.01, IEEE, USA) [0741-3106]
- SCI3) Alice Castan, Hyo-Min Kim and Jin Jang, “All-solution-processed inverted quantum-dot light-emitting diodes“, Applied Materials & Interfaces, 6, pp: 2508-2512 (2014.01.27, ACS Publications, American Chemical Society) [1944-8244]
- SCI4) Anil Kanwat and Jin Jang, “Extremely stable organic photovoltaic incoporated with Wox doped PEDOT:PSS anode buffer layer“, Journal of Materials Chemistry C, 2, pp: 901-907(2014.02, The Royal Society of Chemistry, GB) [2050-7526]
- SCI5) Seung Joo Lee, Hyeong Pil Kim, Abd. Rashid bikn Mohd Yusoff and Jin Jang, “Organic photovoltaic with PEDOT:PSS and V2O5 mixture as hole transport layer“, Solar Energy Mateirals & Solar Cells, 120, pp: 238-243 (2014, Elsevier, The Netherlands) [0927-0248]
- SCI6) Hyo-Min Kim, Abd. Rashid Mohd Yusoff, Tae-Woong Kim, Young-Gog Seol, Hyoeng-Pil Kim and Jin Jang, “Semi-transparent quantum-dot light emitting diodes with an inverted structure“, Journal of Materials Chemistry C, 2, pp: 2259-2265 (2014.02, Royal Society of Chemistry, GB) [2050-7526]
- SCI7) Jae Gwang Um, Mallory Mativenga, Piero Migliorato and Jin Jang, “Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature“, Journal of Applied Physics, 115, pp: 134502/1-5 (2014.04.02, AIP Publishing LLC, USA) [0021-8979]
- SCI8) Xiuling Li, Di Deng, Mallory Mativenga and Jin Jang, “High-speed dual-gate a-IGZO TFT-based circuited with top-gate offset structure“, IEEE Electron Device Letters, 35(4), pp: 461-463 (2014.04.01, IEEE, USA) [0741-3106]
- SCIE9) Seung Joo Lee, Abd. Rashid bin Mohd Yusoff and Jin Jang, “Photovoltaic devices with a PEDOT:PSS:Wox hole transport layer“, RSC Advances, 4, pp: 20242-20246 (2014.04.15, ACS Publications, American Chemical Society) [2046-2069]
- SCIE10) Abd. Rashid bin Mohd Yusoff, Seung Joo Lee, Fabio Kurt Shneider, Wilson Jose da Silva and Jin Jang, “High-performance semitrasparent tandem solar cell of 8.02% conversion efficiency with solution-processed graphene mesh and laminated Ag nanowire top electrodes“, Advanced Energy Materials, 4(9), pp: 1301989/1-10 (2014.05.02, Wiley-VCH Verlag GmbH, Germany) [1614-6832]
- SCIE11) Hyeong Pil Kim, Abd Rashid bin Mohd Yusoff, Hyo Min Kim, Hee Jae Lee, Gi Jun Seo and Jin Jang, “Inverted organic photovoltaic device with a new electron transport layer“, Nanoscale Research Letters, 1-9 (2014, Springer, The Netherlands) [1931-7573]
- SCI12) Seonghyun Jin, Tae-Woong Kim, Young-gul Seol, Mallory Mativenga and Jin Jang, “Reduction of positive-bias-stress effects in bulk-accumulation amorphous-InGaZnO TFTs“, IEEE Electron Device Letters, 35(5), pp: 560-562 (2014.05, IEEE, USA) [0741-3106]
- SCI13) Christophe Avis, Hye Rim Hwang, and Jin Jang, “Effect Of Channel Layer Thickness On The Performance of Indium−Zinc−Tin Oxide Thin Film Transistors Manufactured By Inkjet printing“, Applied Materials & Interfaces, 6, pp: 10941-10945 (2014.05.30, ACS Publications, American Chemical Society, USA) [1944-8244]
- SCI14) Mallory Mativenga, Sungjin Ahn, Suhui Lee, Jaegwang Um, Di Geng, Ravi K. Mruthyunjaya, Gregory N. Heiler, Timothy J. Tredwell and Jin Jang, “Intrinsic channel mobility of amorphous, in-Ga-Zn-O thin-film transistors by a gated four-probe method“, IEEE Transactions on Electron Devices, 61(6), pp: 2106-2112 (2014.06.01, IEEE, USA [0018-9383]
- SCIE15) Abd. Rashid bin Mohd Yusoff, Seung Joo Lee, Jaeyeon Kim, Fabio Kurt Shneider, Wilson Jose da Silva and Jin Jang, “High-performance inverted tandem polymer solar cells utilizing thieno[3,4-c]pyrrole-4,6-dione copolymer“, ACS Applied Materials & Interfaces, 6, pp: 13079-13087 (2014.06.26, ACS Publications, American Chemical Society) [1944-8244]
- SCI16) Jae Gwang Um, Mallory Mativenga, Piero Migliorato and Jin Jang, “Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors“, Solid State Communications, 194, pp: 54-58 (2014.06.27, Elsevier, The Netherlands) [0038-1098]
- SCIE17) Hyeong Pil Kim, Abd Rashid bin Mohd Yusoff, Hee Jae Lee, Seung Joo Lee, Hyo Min Kim, Gi Jun Seo, Jun Ho Youn and Jin Jang, “Effect of ZnO:Cs2Co3 on the performance of organic photovoltaics“, Nanoscale Research Letters, 9, pp: 323/1-11 (2014.06.27, Springer, Germany) [1556-276X]
- SCI18) Sungjin An, Mallory Mativenga, Youngoo Kim and Jin Jang, “Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation“, Applied Physics Lettters, 105(5), pp: 053507/1-5 (2014.08.06, AIP, USA) [0003-6951]
- SCI19) Hoon Jeong, Byung Kook Choi, Hoon-Ju Chung, Sang Gul Lee, Yong Min Ha and Jin Jang, “Long life-time amorphous-InGaZnO TFT-based shift register using a reset clock signal“, IEEE Electron Device Letters, 35(8), pp: 844-846 (2014.08, IEEE, USA) [0741-3106]
- SCI20) Suhui Lee, Mallory Mativenga and Jin Jang, “Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure“, IEEE Electron Device Letters, 35(9), pp: 930-932 (2014.09, IEEE, USA) [0741-3106]
- SCI21) Mallory Mativenga, Su Hwa Ha, Di Geng, Dong Han Kang, Ravi K. Mruthyunjaya, Gregory N. Heiler, Timothy J. Tredwell and Jin Jang, “Infinite output resistance of corbino thin-film transistors with an amorphous-InGaZnO active layer for large-area AMOLED displays“, IEEE Transactions on Electron Devices, 61(9), pp: 3199-3205 (2014.09, IEEE, USA) [0018-9383]
- SCIE22) Youn Goo Kim, Christophe Avis, Hye Rim Hwang, Tae Woong Kim, Young Gok Seol and Jin Jang, “Effect of strontium addition on stability of zinc-tin-oxide thin-film transistors fabricated by solution process“, Journal of Display Technology, 10(11), pp: 939-944 (2014.10, IEEE, USA) [1551-3019X]
- SCI23) Abd Rashid bin Mohd Yusoff, Seung Joo Lee, Jin Jang, Guankui Long, Xiangjian Wan and Yongsheng Chen, "High-efficiency solution-processed small-molecule solar cells featuring gold nanopariticles", Journal of Materials Chemistry A, 2, pp: 19988-19993 (2014.10.07, Royal Society of Chemistry, GB) [2050-7488]
- SCI24) Xiuling Li, Di Geng, Mallory Mativenga, Yuanfeng Chen and Jin Jang, "Effect of Bulk-accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits", IEEE Electron Device Letters, 35(12), pp: 1242-1244 (2014.10.28, IEEE, USA) [0741-3106]
- SCI25) Abd. Rashid bin Mohd Yusoff, Dongcheon Kim, Hyeong Pil Kim, Fabio Kurt Shneider, Wilson Jose da Silva and Jin Jang, "A high efficiency solution processed polymer inverted triple-junction solar cell exhibiting a power conversion efficiency of 11.83%", Energy & Environmental Science, 8, pp: 303-316 (2014.10.30, Royal Society of Chemistry, GB) [1754-5692]
- SCI26) Anil Kanwat, William Milne and Jin Jang, "Vertical phase separation of PSS in organic photovoltaics with a nickel oxide doped PEDOT:PSS interlayer", Solar Energy Materials & Solar Cells, 132, pp: 623-631 (2014.11.07, Elsevier, The Netherlands) [0927-0248]
- SCI27) Md Delwar Hossain Chowdhury, Jae Gwang Um and Jin Jang, "Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250℃", Applied Physics Letters, 105, pp: 233504/1-4 (2014.12.10, AIP, USA) [0003-6951]
- SCI28) Jeonggi Kim, Anil Kanwat, Hyo-Min Kim and Jin Jang, "Solution processed polymer light emitting diode with vanadium-oxide doped PEDOT:PSS", Physica Status Solidi a, 212(3), pp: 640-645 (2014.11.05, Wiley-VCH verlag GmbH & Co., Germany) [1862-6300]
- SCI29) Piero Migliorato, Md Delwar Hossain Chowdhury, Jae Gwang Um, Manju Seok, Mallory Mativenga and Jin Jang, “Characterization and modelling of a-IGZO TFTs“, Journal of Display Technology, **(**), pp: ****-**** (2014.**, IEEE, USA) [1551-319X]
- SCI30) Byung Soon Kim, Won Bong Jang, Hak Gee Jung and Jin Jang, “Solution processed PLED on transparent plastic substrate for flexible display“, Molecular Cystals and Liquid Crystals, 601(1), pp: 237-244 (2014.12.06, Taylor & Francis, UK) [1542-1406]
- 학회1) "Characterlization and modeling of a-IGZO TFTs“, ITC 2014 (2014.01.23~24, Delft, The Netherlands)
- 학회2) “High efficiency OPV", 2014 IDRC (ECOLE-KHU Workshop, Ecole Polytechnique, Jan 20, 2014)
- 학회3) "Technologies for flexible AMOLED”, PIDA (2014.01.29-31, Taipei, Taiwan)
- 학회4) “Technology issues on plastic AMOLED”, CITE 2014 (2014.04.10-11, Shenzhen, China)
- 학회5) “Advanced detaching technique for plastic AMOLED”, LOPEC 2014 (2014.05.26-28, Messe Munchen, Germany)
- 학회6) “High-efficiency inverted quantum-dot light emitting diodes for display”, SID 2014 Digest, 7.4 (2014.06.01-06, Sandiego Convention Center, San Diego, California, USA)
- 학회7) “Oxide Versus LTPS TFTs for Active-Matrix Displays, SID 2014 Digest, 3.1 (2014.06.01-06, Sandiego Convention Center, San Diego, California, USA)
- 학회8) “Oxide TFT and circuits for transparent electronics”, CAD-TFT(Computer Aided Design for Thin-Film Transistor) 2014, pp: 20, Plenary Session 2 (2014.10.15-17, Zhongshan Hotel, Nanjing, China)
- 학회9) "Bulk accumulation oxide TFTs for high resolution displays”, IDW 2014, AMD4-1 (2014.12.03-05, TOKI MESSE Niigata Convention Center, Niigata, Japan)
- 학회10) “All solution processed QLED”, IDW 2014, MEET3-1 (2014.12.03-05, TOKI MESSE Niigata Convention Center, Niigata, Japan)
- 학회11) “Technology issues for flexible AMOLED displays”, INMS2014 (The 8th International Nanotechnology/MEMS Seminar) (Dec 1-2, Shizuoka University, Hamamatsu, Japan)
- SCI1) Abd. Rashid bin Mohd Yusoff, Hyeong Pil Kim and Jin Jang, “Organic photovoltaics with V2O5 anode and ZnO nanoparticles cathode buffer layers“, Organic Electronics, 14, pp: 858-861 (2013.01.05, Elsevier, The Netherlands) [1566-1199]
- SCI2) Hyeong Pil Kim, Hee Jae Lee, Abd. Rashid bin Mohd Yusoff and Jin Jang, “Semi-transparent organic inverted photovoltaic cells with solution processed top electrode”, Solar Energy Materials & Solar Cells, 108, pp: 38-43 (2013.01, Elsevier, The Netherlands) [0927-0248]
- SCI3) Mallory Mativenga, Sejin Hong and Jin Jang, “High current stress effects in amorphous-InGaZnO4 thin-fi transistors“, Applied Physics Letters, 102, pp: 023503/1-4 (2013.01.15, American Institute of Physics, US) [0003-6951]
- SCI4) Hyo-Min Kim, Jun-Ho Youn, Gi-Jun Seo and Jin Jang, “Inverted quantum-dot light-emitting diodes with solution-processed aluminum-zinc oxide as a cathode buffer“, Journal of Materials Chemistry C, 8(1), pp: 1567-1573 (2013.02.28, The Royal Society of Chemistry, GB) [2050-7526]
- SCI5) Abd. Rashid bin Mohd Yusoff, Hyeong Pil Kim and Jin Jang, “Inverted organic solar cells with TiOx cathode and graphene oxide anode buffer layers“, Solar Energy Materials & Solar Cells, 109, pp: 63-69 (2013.02, Elsevier, The Netherlands) [0927-0248]
- SCI6) Sung Hoon Kim, Sun Hee Lee, Youn Goo Kim and Jin Jang, “Ink-jet-printed organic thin-film transisotrs for low-voltage-driven CMOS circuits with solution-processed AlOx gate insulator“, IEEE Electron Device Letters, 34(2), pp: 307-309 (2013.02., IEEE, US) [0741-3106]
- SCI7) Hyeong Pil Kim, Abd. Rashid bin Mohd Yusoff and Jin Jang, “Organic solar cells using a reduced graphene oxide anode buffer layer“, Solar Energy Materials & Solar Cells, 110, pp: 87-93 (2013.03, Elsevier, The Netherlands) [0927-0248]
- SCI8) Dong Han Kang, Ji Ung Han, Mallory Mativenga, Su Hwa Ha and Jin Jang, “Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors“, Applied Physics Letters, 102, pp: 083508/1-4 (2013.03.01, AIP, US) [0003-6951]
- SCI9) Hee-Jae Lee, Hyeong-Pil Kim, Hyo-Min Kim, Jun-Ho Youn, Dong-Hee Nam, Young-Gu Lee, Jeung-Gil Lee, Abd. Rashid bin Mohd Yusoff and Jin Jang, “Solution processed encapsulation for organic photovoltaics“, Solar Energy Materials & Solar Cells, 111, pp: 97-101 (2013.04, Elsevier, The Netherlands) [0927-0248]
- SCI10) Sung Hoon Kim, Il Kang, Youn Goo Kim, Hye Rim Hwang, Yun-Hi Kim, Soon-Ki Kwon and Jin Jang, “High performance ink-jet printed diketopyrrolopyrrole-based copolymer thin-film transistors using a solution-processed aluminum oxide dielectric on a flexible substrate“, Journal of Materials Chemistry C, 1, pp: 2408-2411 (2013.02.28, The Royal Society of Chemistry, GB) [2050-7526]
- SCI11) Hyeong Pil Kim, Abd. Rashid Bin Mohd Yusoff and Jin Jang, “Organic photovoltaic solar cell with cathode modified by ZnO“, Journal of Nanoscience and Nanotechnology, 13, pp: 1-6 (2013, American Scientific Publishers, USA) [1533-4880]
- SCI12) Md Delwar Hossain Chowdhury, Piero Migliorato and Jin Jang, “Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc thin film transistors“, Applied Physics Letters, 102, pp: 143506/1-5 (2013.04.12, AIP, USA) [0003-6951]
- SCI13) Jun Ho Youn, Su Jin Baek, Hyeong Pil Kim, Dong Hee Nam, Younggu Lee, Jeung Gil Lee and Jin Jang, “Improving the lifetime of a polymer light-emitting diode by introducing solution processed tungsten-oxide“, Journal of Materials Chemistry C (2013, The Royal Society of Chemistry, GB) [2050-7526]
- SCI14) Wilson Jose da Silva, Hyeong Pil Kim, Abd. Rashid bin Mohd Yusoffb and Jin Jang, "Transparent flexible organic solar cells with 6.87% efficiency manufactured by an all-solution process", Nanoscale, pp: 9324-9329 2013.09.06, RSC Publishing, England) [2040-3364]
- SCI15) Jae Gwang Um, Mallory Mativenga and Jin Jang, “Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress“, Applied Physics Letters, 103, pp: 033051/1-5 (2013.07.15, AIP, USA) [0003-6951]
- SCI16) Si Hyung Park, Mallory Mativenga and Jin Jang, “Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping“, Applied Physics Letters, 103, pp: 043509/1-5 (2013.07.15, AIP, USA) [0003-6951]
- SCI17) Sanghwa Lee, Inkyung Jeong, Hyeong Pil Kim, Soon Yong Hwang, Tae Jung Kim, Young Dong Kim, Jin Jang and Jungho Kim, “Effect of incidence angle and polarization on the optimized layer structure of organic solar cells“, Solar Energy Materials & Solar Cells, 118, pp: 9-17 (2013, Elsever, The Netherlands) [0927-0248]
- SCI18) Abd. Rashid bin Mohd Yusoff, Wilson Jese da Silva, Hyeong Pil Kim and Jin ang, “Extremely stable all solution processed organic tandem solar cells with TiO2/GO recombination layer under continuous light illumination“, Nanoscale, pp: (2013.09.06, RSC Publishing, England) [2040-3364]
- SCI19) Dong Han Kang, In Kang, Sang Hyun Ryu, Young Sik Ahn and Jin Jang, “Effect of SiO2 and/or SiNx passivation layer on thermal stability of self-aligned coplanar amorphous indium-gallium-zinc-oxide thin-film transistors“, Journal of Display Technology, 9(9), pp: 699-702 (2013.09, IEEE, USA) [1551-319X]
- SCI20) Md Delwar Hossain Chowdhury, Piero Migliorato and Jin Jang, “Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10K“, Applied Physics Letters, 103(15), pp: 152103/1-4 (2013.10.08, AIP, USA) [0003-6951]
- SCI21) Man Ju Seok, Mallory Mativenga, Di Geng and Jin Jang, “Achieving high performance oxide TFT-based inveters by use of dual-gate configurations with floating and biased secondary gates“, IEEE Transactions on Electron Devices, 60(11), pp: 3787-3793 (2013.11, IEEE, USA) [0018-9383]
- SCI22) Wilson Jose da Silva, Abd Rashid bin Mohd Yusoff and Jin Jang, “GO:PEDOT:PSS for high-performance green phosphorescent organic lignt-emitting diode“, IEEE Electron Device Leetters, 34(12), pp: 1566-1568 (2013.10.22, IEEE, USA) [0741-3106]
- SCI23) Abd. Rashid bin Mohd Yusoff, Hyeong Pil Kim and Jin Jang, “High performance organic photovoltaic with zinc oxide and graphene oxide buffer layers“, Nanoscale, pp: To be published (2013.11.14, The Royal Society of Chemistry, England) [2040-3364]
- SCI24) Mallory Mativenga, Sungjin Ahn and Jin Jang, “Bulk accumaulation a-IGZO TFT for high current and turn-on voltage uniformity“, IEEE Elecron Device Letters, 34(12), pp: 1533-1535 (2013.12, IEEE, USA) [0741-3106]
- SCI25) Hoon Jeong, Chung Sik Kong, Sung Wook Chang, Kown Shik Park, Sang Gul Lee, Yong Min Ha and Jin Jang, “Temperature sensor made of amorphous indium-gallium-zinc oxide TFTs“, IEEE Elecron Device Letters, 34(12), pp: 1569-1571 (2013.12, IEEE, USA) [0741-3106]
- SCI26) Su Hwa Ha, Dong Han kang, In Kang, Ji Ung Han, Mallory Mativenga, Jin Jang, Mallory Mativenga, Sungjin Ahn and Jin Jang, “Channel length dependant bias-stability of self-aligned coplanar a-IGZO TFTs“, Journal of Display Technology, 9(12), pp: 985-988 (2013.12, IEEE, USA) [1551-319X] SCIE
- SCI27) Sejin Hong, Suhui Lee, Mallory Mativenga and Jin Jang, “Reduction of negative bias and light instability of a-IGZO TFTs by dual-gate driving“, IEEE Elctron Device Letters, To be published (IEEE, USA) [0741-3106]
- SCI28) Abd. Rashid bin Mohd Yusoff, Seung Joo Lee, Hyeong Pil Kim, Fabio Kurt Shneider, Wilson Jose da Silva, and Jin Jang, “8.91% Power Conversion Effi ciency for Polymer Tandem Solar Cells“, Advanced Functional Materials, To be published (2013, Wiley-VCH Verlag GmbH & Co., Germany) [1616-301X]
- 학회1) Jin Jang, “Origings of light and bias stress instailities in a-IGZO thin film transistors“, Proc. of ITC 2013, 2pAI03 (2013.03.01-02, Tokyo Univ., Tokyo, Japan) (Invited)
- 학회2) J. Jang, “Past, current and future TFT technology for display manufacturing“, AM-FPD13 (2013.07.02-05, Ryukoku Univ. Avanti Kyoto Hall, Kyoto, Japan) (Invited)
- 학회3) J. Jang, “Effect of solution process metal-oxides on the performance of organic devices“, ISPSA 2013, D5-I-01 (2013.07.02-05, Ramada Plaza Jeju Hotel, Jeju, Korea) (Invited)
- 학회4) J. Jang, “Dual gate oxide TFT“, International Conference on Semiconductor technology for ultra large scale integrated circuits and thin film transistors, Session 4 (2013.07.07-12, Villard-de-Lans, France) (Invited)
- 학회5) J. Jang, “Solution processed devices for large area electronics“, Printed Electronics Asia 2013 (2013.07.09-10, Hilton Tokyo, Japan) (Invited)
- 학회6) J. Jang, “Reliability of oxide TFT for display application“, IPFA2013 (2013.07.15-19, Shangri-La Hotel, Suzhou, China) (Invited)
- 학회7) J. Jang, “Bias-stress effect in dual gate a-IGZO TFTs“, ICANS 25, Mo-B2.6 (2013.08.18-23, Toronto, Canada) (Invited)
- 학회8) J. Jang, “Solution-processed transparent semiconductors for plastic optoelectronics“, Eurodsplay 2013 (2013.09.16-18, London, UK) (Invited)
- 학회9) J. Jang, “Technology issues for AMOLED“, A-COE 2013 (2013.11.13-15, Pohang, POSTECH, Korea) (Invited)
- 학회10) J. Jang, A. Castan and H. M. Kim, “Quantum-dot light emitting diodes for improvements of brightness and efficiency“, IDW 2013, MEET3-1 (2013.12.04-06, Sapporo Convention Center, Sapporo, Japan) (Invited)
- 학회11) J. Jang, M. Mativenga, J. G. Um, M. D. H. Chowdhury, “Stability of oxide TFTs“, IDW 2013, AMD401 (2013.12.04-06, Sapporo Convention Center, Sapporo, Japan) (Invited)
- SCI1) Sung Hoon Kin, Hye Rim, Ho Joong Kwon and Jin Jang, “Unipolar depletion-load organic circuits on flexible substrate by self-organized polymer blending with 6, 13-bis(triisopropylsilylethynyl) pentacene using ink-jet printing“, Applied Physics Letters, 100, pp: 053302/1-4 (2012.01.31, AIP, USA) [0003-6951]
- SCI2) Piero Migliorato, Manju Seok and Jin Jang, “Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide”, Applied Physics Letters, 100, pp: 073506/1-4 (2012.02.15, AIP, USA) [0003-6951]
- SCI3) Yeon-IL Lee, Jun-Ho Youn, Mi-Sun Ryu, Jungho Kim and Jin Jang, “CdSe quantum dot cathode buffer for inverted organic bulk hetero-junction solar cells”, Organic Electronics, 13, pp: 1302-1307 (2012.04.25, Elsevier, The Netherlands) [1566-1199]
- SCI4) Mallory Mativenga, Di Geng, Jeff Hsin Chang, Timothy J. Tredwell and Jin Jang, “Performance of 5-nm a-IGZO TFTs with various channel lengths and an etch stopper manufactured by back UV exposure”, IEEE Electron Devices Letters, 33(6), pp: 824-826 (2012.06, IEEE, USA) [0741-3106]
- SCI5) Ung Gi Lee, Mallory Mativenga, Dong Han Kang and Jin Jang, “A Three-mask-processed coplanar a-IGZO TFT with source and drain offsets”, IEEE Electron Devices Letters, 33(6), pp: 812-814 (2012.06, IEEE, USA) [0741-3106]
- SCI6) M. Mativenga, Dong Han Kang, Ung Gi Lee and Jin Jang, “Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistor with source-and drain-offsets”, Solid State Communications, 152, pp: 1739-1743 (2012.06.20, Elsevier, The Netherlands) [0038-1098]
- SCI7) Christophe Avis, Youn Goo Kim and Jin Jang, “Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors”, Journal of Materials Chemistry, 22(34), pp: 17415-17420 (2012.06.29, The Royal Society of Chemistry, GB) [0959-9428]
- SCI8) Youn Goo Kim, Christophe Avis and Jin Jang, “Low voltage driven, stable solution-processed zinc-tin-oxide TFT with HfOy and AlOx stack gate dielectric”, ECS Solid State Letters, 1(2), pp: Q23-Q25 (2012.07.20, ECS, USA) [2162-8742]
- SCI9) Sang Hyun Ryu, Young Chul Park, Mallory Mativenga, Dong Han Kang and Jin Jang, “Amorphous-InGaZnO4 thin-film transistors with damage-free back channel wet-etch process”, ECS Solid State Letters, 1(2), pp: Q17-Q19 (2012.07.20, ECS, USA) [2162-8742]
- SCI10) Mallory Mativenga, Tae-Ha Hwang and Jin Jang, “Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures”, AIP Advances, 2, pp: 032129/1-7 (2012.07.31, AIP, USA) [2158-3226]
- SCI11) Di Geng, Dong Han Kang, Man Ju Seok, Mallory Mativenga and Jin Jang, “High-speed and low-voltage-driven shift register with self-aligned coplanar a-IGZO TFTs”, IEEE Electron Device Letters, 33(7), pp: 1012-1014 (2012.07, IEEE, USA) [0741-3106]
- SCI12) Abd. Rashid Bin Mohd Yusoff, Hyeong Pil Kim and Jin Jang, “Comparison of organic photovoltaic with graphene oxide cathode and anode buffer layer”, Organic Electronics, 14, pp: 2379-2385 (2012.08.01, Elsever, The Netherlands) [1566-1199]
- SCI13) Yeon-Il Lee, Jun-Ho Youn, Mi-Sun Ryu, Jungho Kim, Hie-Tae Moon and Jin Jang, “Highly stable inverted poly(3-hexylthiophene):methano-fullerene[6,6]-phenyl C71-butyric acid methyl ester bulk heterojunction solar cell with thin oxide nano particle layer using solution process”, Current Applied Physics, 12, pp: e46-e48 (2012.09, Elsevier, The Netherlands) [1567-1739]
- SCI14) Min Hee Choi and Jin Jang, “Effect of SAM layer on bias-stability of inkjet printed TIPS pentacene thin-film transistor”, Current Applied Physics, 12, pp: e6-e9 (2012.09, Elsevier, The Netherlands) [1567-1739]
- SCI15) Sun Hee Lee, Sung Hoon Kim, Min Hee Choi, Dong Joon Choo and Jin Jang, “Solution processed Ag electrode for organic thin-film transistors”, Solid-State Electronics, 75, pp: 1-5 (2012.09, Elsevier, The Netherlands) [0038-1101]
- SCI16) Mallory Mativenga, Jae Kwang Um, Dong Han Kang, Ravi K. Mruthyunjaya, Jeff H. Chang, Gregory N. Heiler, Timothy J. Tredwell and Jin Jang, “Edge Effects in bottom-gate inverted staggered thin-film transistors”, IEEE Transactions on Electron Devices, 59(9), pp: 2501-2506 (2012.09, IEEE, USA) [0018-9383]
- SCI17) Jae Gwang Um, Mallory Mativenga, Piero Migliorato and Jin Jang, “Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time”, Applied Physics Letters, 101, pp: 113504/1-4 (2012.09.12, AIP, USA) [0003-6951]
- SCI18) Piero Migliorato, Md Delwar Hossain Chowdhury, Jae Kang Um, Manju Seok and Jin Jang, “Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor”, Applied Physics Letters, 101, pp: 123501/1-5 (2012.09.17, AIP, USA) [0003-6951]
- SCI19) Hyeong Pil Kim, Mi Sun Ryu, Jun Ho Youn, Abd Rashid Bin Mohd Yusoff and Jin Jang, “Photomask effect in organic solar cells with ZnO cathode buffer layer”, IEEE Electron Device Letters, 33(10), pp: 1480-1482 (2012.10, IEEE, USA) [0741-3106]
- SCI20) Hyeong Pil Kim, Abd. Rashid bin Mohd Yusoff, Mi Sun Ryu and Jin Jang, “Stable photovoltaic cells based on graphene oxide/indium zinc oxide bilayer anode buffer”, Organic Electronics, 13, pp: 3195-3202 (2012.10.11, Elsevier, The Netherlands) [1566-1199]
- SCI21) Min Hee Choi, Byung Soon Kim and Jin Jang, High-performance flexible TFT circuits using TIPS pentacene and polymer blend on plastic, IEEE Electron Device Letters, 33(11), pp: 1571-1573 (2012.11, IEEE, USA) [0741-3106]
- SCI1) Ling Li, K. S. Chung and J. Jang, “Field effect mobility model in organic thin film transistor”, Applied Physics Letters, 98, pp: 023305/1-023305/3 (2011.01.13, AIP, USA) [0003-6951]
- SCI2) C. Avis and J. Jang, “Characterization of unpassivated-solution-processed zin-tin oxide thin film transistors”, Japanese Journal of Applied Physics, 50, pp: 01BG03/1-01BG03/3 (2011.01.20, The Japan Society of Applied Physics, Japan) [0021-4922]
- SCI3) Y. I. Lee, J. H. Youn, M. S. Ryu, J. H. Kim, J. Jang and H. T. Moon, “Degradation of poly(3-hexylthiophene): methano-fullerene[6,6]-phenyl-C71 butyric acid methyl ester bulk heterojunction solar cells and annealing effect on the degraded devices”, Japanese Journal of Applied Physics, 50(1), pp: 011601/1-33 (2011.01.20, The Japan Society of Applied Physics, Japan) [0021-4922]
- SCI4) M. Mativenga, M. H. Choi, J. W. Choi and J. Jang, “Transparent flexible circuits based on amorphous-indium-gallium-zinc-oxide thin-film transistors”, IEEE Electron Device Letters, 32(2), pp: 170-172 (2011.02, ECS, USA) [0741-3106]
- SCI5) S. H. Yang, C. S. Hwang, J. I. Lee, S. M. Yoon, M. K. Ryu, K. I. Cho, S-H K. Park, S. H. Kim, C. E. Park and J. Jang, “Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors”, Applied Physics Letters, 98, pp: 103515/1-103515/2 (2011.03.11, AIP, USA) [0003-6951]
- SCI6) W. G. Lee, T. H. Lim and J. Jang, “Flexibility of low temperature polycrystalline silicon thin-film transistor on tungsten foil”, Japanese Journal of Applied Physics, 50, pp: 03CB03/1-03CB03/3 (2011.03.22, The Japan Society of Applied Physics, Japan) [0021-4922]
- SCI7) Md D. H. Chowdhury, P. Migliorato and J. Jang, “Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film transistors”, Applied Physics Letters, 98, pp: 103511/1-103511/2 (2011.04.14, AIP, USA) [0003-6951]
- SCI8) M. Mativenga, M. H. Choi, W. Choi, J. W. Choi, J. Jang, R. Mruthyunjaya, T. J. Tredwell, E. Modzy and C. K-Williams, “Reduction of hot carrier effects in silicon-on-glass TFTs”, Journal of the Electrochemical Society, 156(6), pp: J169-J174 (2011.04.13, ECS, USA) [0013-4651]
- SCI9) M. Mativenga, M. H. Choi, D. H. Kang and J. Jang, “High-performance drain-offset a-IGZO thin-film transistors”, IEEE Electron Device Letters, 32(5), pp: 644-646 (2011.05. IEEE, USA) [0741-3106]
- SCI10) I. Kang, C. Avis, D. H. Kang and J. Jang, “Low-voltage poly-Si TFT with solution-processed aluminum oxide gate dielectric”, Electrochemical and Solid-State Letters, 14(8), pp: J51-J54 (2011.05.23, ECS, USA) [1099-0062]
- SCI11) D. Geng, D. H. Kang and J. Jang, “High-performance amorphous indium-gallium-zinc-oxide thin-film transistor with a self-aligned etch stopper patterned by back-side UV exposure”, IEEE Electron Device Letters, 32(6), pp: 758-760 (2011.06., IEEE, USA) [0741-3106]
- SCI12) M. S. Ryu and J. Jang, “Influence of n-type chemical doping layer on the performance of organic photovoltaic solar cells”, Solar Energy Materials & Solar Cells, 95(7), pp: 1896-1900 (2011.07, Elsevier, The Netherlands) [0927-0248]
- SCI13) C. Avis and J. Jang, “High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method”, Journal of Materials Chemistry, 21, pp: 10649-10652 (2011, The Royal Society of Chemistry, England) [0959-9428]
- SCI14) M. Mativenga, M. H. Choi, J. Jang, R. Mruthyunjaya, T. J. Tredwell, E. Mozdy and C. K. Williams, “Degradation Model of self-heating effects in silicon-on-glass TFTs”, IEEE Transactions on Electron Devices, 58(8), pp: 2440-2447 (2011.08, IEEE, USA) [0018-9383]
- SCI15) S. Saxena and J. Jang, “Protrusions of super grains formed by ultrashort Xe flash-lamp annealing of amorphous silicon and its effect on the performances of thin-film transistors”, IEEE Transactions on Electron Devices, 58(8), pp: 2638-2643 (2011.08., IEEE, USA) [0018-9383]
- SCI16) M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim and J. Jang, “A full-swing a-IGZO TFT-based inverter with a top-gate-bias-induced depletion load”, IEEE Electron Device Letters, 32(8), pp: 1089-1091 (2011.08.01, IEEE, USA) [0741-3106]
- SCI17) M. Mativenga, M. J. Seok and J. Jang, “Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-film transistors with various channel width”, Applied Physics Letters, 99(12), pp: 122107/1-3 (2011.09.22, AIP, USA) [0003-6951]
- SCI18) U. G. Lee and J. Jang, “Drain-induced barrier lowering in short-channel poly-Si TFT after off-bias stress using metal-induced crystallization of amorphous silicon”, IEEE Electron Device Letters, 32(9), pp: 1233-1235 (2011.09., IEEE, USA) [0741-3106]
- SCI19) M. S. Ryu and J. Jang, “Effect of solution processed graphene oxide/nickel oxide bi-layer on cell performance of bulk-heterojunction organic photovoltaic”, Solar Energy Materials & Solar Cells, 95(10), pp: 2893-2896 (2011.10., Elsevier, The Netherlands) [0927-0248]
- SCI20) S. H. Yang, K. H. Ji, U. K. Kim, C. S. Hwang, S-H K. Park, C. S. Hwang, J. Jang and J. K. Jeong, “Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment”, Applied Physics Letters, 99(10), pp: 102103/1-3 (2011.10., AIP, USA) [0003-6951]
- SCI21) D. H. Kang, I. Kang, S. H. Ryu and J. Jang, “Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits”, IEEE Electron Device Letters, 32(10), pp: 1385-1387 (2011.10, ECS, USA) [0741-3106]
- SCI22) M. S. Ryu and J. Jang, “Enhanced efficiency of organic photovoltaic cells using solution-processed metal oxide as an anode buffer layer”, Solar Energy Materials & Solar Cells, 95(11), pp: 3015-3020 (2011.11., Elsevier, The Netherlands) [0927-0248]
- SCI23) H. Jeong, M. Mativenga, S. G. Lee, Y. M. Ha and J. Jang, “Design of a low-power-consumption a-IGZO TFT-based Vcom driver circuits with long-term reliability”, Journal of SID, 19(11), pp: 825-832 (2011.11, SID, USA) [1072-0922] SCIE
- SCI24) J. H. Youn, Y. I. Lee, M. S. Ryu, A. Elschner, W. Lövenich, A. Scheel, H. T. Moon and J. Jang, “Effect of solution processed hole injection layers on device performance of phosphorescent green OLEDs”, Journal of the Electronchemical Society, 158(11), pp: J321-J325 (2011.11., ECS, USA) [0013-4651]
- SCI25) Sungyeop Jung, Kyoung-Youn Kim, Jun-Ho Young, Hie-Tae Moon, Jin Jang and Jungho Kim, “Optical modeling and analysis of organic solar cells with coherent multilayers and incoherent glass substrate using generalized transfer matrix method”, Japanese Journal of Applied Physics, 50(11), pp: 122301/1-8 (2011.11.17, The Japan Society of Applied Physics, Japan) [0021-4922]
- SCI26) Y. I. Lee, J. H. Youn, M. S. Ryu, J. H. Kim, H. T. Moon and J. Jang, “Electrical properties of inverted poly(3-hexylthiophene): Methano-fullerene [6,6]-phenyl C71-butyric acid methyl ester bulk hetero-junction solar cell with Cs2CO3 and MoO3 layers”, Solar Energy Materials & Solar Cells, 95(12), pp: 3276-3280 (2011.12., Elsevier, The Netherlands) [0927-0248]
- SCI27) Md Delwar Hossain Chowdhury, Sang Hyun Ryu, Piero Migliorato and J. Jang, “Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors”, Journal of Applied Physics, 110, pp: 114503/1-5 (2011.12.02, AIP, USA) [0021-8979]
- SCI1) S. Manivannan, J. H. Ryu, H. E. Lim, M. Nakamoto, J. Jang and K. C. Park, “Properties of surface treated transparent conducting single walled carbon nanotube films”, Journal of Material Science: Mater. Electron., 21(1), pp: 72-77 (2010.01, Springer) [0022-2461]
- SCI2) M. S. Ryu, H. J.terial Science: Mater. Electron., 21(1), pp: 72-77 (2010.01, Springer) [0022-2461] Cha and J. Jang, “Improvement of operation lifetime for conjugated polymer: fullerene organic solar cells by introducing a UV absorbing film”, Solar Energy Materials & Solar Cells, 94(2), pp: 152-156 (2010.02, Elsevier, The Netherlands) [0927-0248]
- SCI3) D. H. Kang, M. K. Park, J. Jang, Y. J. Chang, J. H. Oh, J. B. Choi, C. W. Kim, “Active-matrix organic light-emitting diode using inverse-staggered poly-Si TFTs with a center-offset gated structure”, J. of the SID, 18(2), pp: 122-127 (2010.02, SID, USA) [1071-0922]
- SCI4). S. H. Yang, D. H. Cho, M. K. Ryu, S-H Ko Park, C. S. Hwang, J. Jang and J. K. Jeong, “High-performance Al-Sn-Zn-In-O thin-film transistors: impact of passivation layer on device stability”, IEEE Electron Device Letters, 31(2), pp: 144-146 (2010.02, IEEE, USA) [0741-3106]
- SCI5) W. S. Jeon, T. J. Park, K. H. Kim, R. Pode, J. Jang and J. H. Kwon, “High efficiency red phosphorescent organic light-emitting diodes with single layer structure”, Organic Electronics, 11(2), pp: 179-183 (2010.02., Elsevier, The Netherlands) [1566-1199]
- SCI6) M. S. Ryu, H. J. Cha and J. Jang, “Effects of thermal annealing of polymer:fullerene photovoltaic solar cells for high efficiency”, Current Applied Physics, 10(2), pp: S206-S209 (2010.03, Elsevier, The Netherlands) [1567-1739]
- SCI7). J. I. Kim, J. W. Choi, W. J. Choi, M. Mativenga, J. Jang, C. K. Williams, C. C. Wang, E. Mozdy, J. Cites, J. Lai and T. Tredwell, “High performance pMOS circuits with silicon-on-glass TFTs”, Solid-State Electronics, 54(3), pp: 299-302 (2010.03, Elsevier, The Netherlands) [0038-1101]
- SCI8) J. H. Youn, Y. I. Lee, H. T. Moon, M. S. Ryu, J. H. Kim and J. Jang, “Trap energy level of P3HT: PCBM-71 bulk heterojunction solar cells with PICTS(photo-induced current transient spectroscopy)”, Current Applied Physics, 10, pp: S525-S527 (2010.03, Elsevier, The Netherlands) [1567-1739]
- SCI9) C. H. Kim, M. H. Choi, S. H. Lee, J. Jang and S. Kirchmeyer, “Dependence of persistent photocurrent on gate bias in inkjet printed organic thin-film transistor”, Applied Physics Letters, 96, pp: 123301/1-3 (2010.03.24, AIP, USA) [0003-6951]
- SCI10) S. H. Yang, J. I. Lee, S-H Ko Park, W. S. Cheong, D. H. Cho, S. M. Yoon, C. W. Byun, C. S. Hwang, H. Y. Chu, K. I. Cho, T. Ahn, Y. J. Choi, M. H. Yi and J. Jang, “Environmentally stable transparent organic/oxide hybrid transistor based on an oxide semiconductor and a polyimide gate insulator”, IEEE Electron Device Letters, 31(5), pp: 446-448 (2010.05, IEEE, USA) [0741-3106]
- SCI11) S. H. Kim, S. H. Lee and J. Jang, "Fabrication and characterization of low-temperature poly-silicon lateral p-i-n diode", IEEE Electron Device Letters, 31(5), pp: 443-445 (2010.05., IEEE, USA) [0741-3106]
- SCI12) S. H. Han, S. H. Lee, J. H. Hur, J. Jang, Y. B. Park, G. Irvin and P. Drazaic, “Contact resistance between Au and solution-processed CNT”, Solid-State Electronics, 54, pp: 586-589 (2010.05, Elsevier, The Netherlands) [0038-1101]
- SCI13) S. J. Lee, S. H. Kim, D. W. Kim, K. H. Kim, B. K. Kim and J. Jang, “Effect of hydrogen plasma passivation on performance of HIT Solar cells”, Solar Energy Materials & Solar Cells, 95(1), pp: 81-83 (2010.05.26, Elsevier, The Netherlands) [0927-0248]
- SCI14) S. H. Lee, S. H. Kim, D. J. Choo and J. Jang, “Selective coating of PPE pentacene on TFT region for solution processed organic electronics”, Organic Electronics, 11(7), pp: 1268-1272 (2010.07., Elsevier, The Netherlands) [1566-1199]
- SCI15) J. W. Choi, J. H. Cheon, J. H. Oh, J. Jang, S. C. Kim, J. S. Ahn, C. A. Kosik Williams and J. G. Couillard, “Reduction of off-state currents in silicon on glass thin film transistor by off-set bias stress", Electrochemical and Solid-State Letters, 13(7), pp: J85-J87 (2010.07, ECS, USA) [1099-0062]
- SCI16) M. S. Ryu, J. Jang, “Improvement of conversion efficiency of bulk heterojunction organic solar cells using photo-curable crosslinker”, Solar Energy Materials & Solar Cells, 94(8), pp: 1384-1388 (2010.08., Elsevier, The Netherlands [0927-0248]
- SCI17) S. H. Kim, S. H. Lee and J. Jang, “High-performance n-channel organic thin-film transistor for CMOS circuits using electron-donating self-assembled layer”, IEEE Electron Device Letters, 31(9), pp: 1044-1056 (2010.09., IEEE, USA) [0741-3106]
- SCI18) J. W. Choi, J. I. Kim, S. H. Kim and J. Jang, “Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors”, IEEE Transactions on Electron Device Letters, 57(9), pp: 2330-2334 (2010.09, IEEE, USA) [0018-9383]
- SCI19) Y. I. Lee, J. H. Youn, M. S. Ryu, J. H. Kim, J. Jang and H. T Moon, “Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device”, Journal of Applied Physics, 108, pp: 054506/1-4 (2010.09.01, AIP, USA) [0021-8979]
- SCI20) Md D. H. Chowdhury, P. Miglioraton and J. Jang, “Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors”, Applied Physics Letters, 97, pp: 173506/13 (2010.10.28, AIP, USA) [0021-8979]
- SCI21) S. Saxena and J. Jang, “Rapid-thermal annealing of amorphous silicon on oxide semiconductors”, IEICE Transactions on Electronics, E93-C(10), pp: 1495-1498 (2010.10., IEICE, Japan) [0916-8524]
- SCI22) S. Saxena, D. C. Kim, J. H. Park and J. Jang, “Polycrystalline silicon thin-film transistor using Xe flash-lamp annealing”, IEEE Electron Devices Letters, 31(11), pp: 1242-1244 (2010.11., IEEE, USA) [0741-3106]
- SCI23) M. H. Choi, J. W. Choi, S. H. Park, W. J. Choi, M. Mativenga, J. Jang, R. Mruthyunjaya, T. J. Tredwell, E. Mozdy and C. K. Williams, “Low voltage-driven CMOS circuits based on SiOG”, Electrochemical and Solid-State Letters, 14(1), pp: J1-J3 (2010.11.09, ECS, USA) [1099-0062]
- SCI24) C. Avis and J. Jang, “A high performance inkjet printed Zinc tin oxide transparent thin-film transistor manufactured at the maximum process temperature of 300℃ and its stability test”, Electrochemical and Solid-State Letters, 14(2), pp: J9-J11 (2010.11.18, ECS, USA) [1099-0062]
- SCI25) S. H. Lee, S. H. Kim, D. J. Choo and J. Jang, “Stable 6,13-bis(4-pentylphenylethynyl) pentacene thin-film transistor by ink-jet printing”, Current Applied Physics, 10(4), pp: e161-e165 (2010.11., Elsevier, The Netherlands) [1567-1739]
- SCI26) Y. I. Lee, J. H. Youn, M. S. Ryu, J. H. Kim, H. T. Moon and J. Jang, “Highly efficient inverted poly(3-hexylthiophene): Methano-fullerene [6,6]-phenyl C71-butyric acid methyl ester bulk heterojunction solar cell with Cs2CO3 and MoO3”, Organic Electronics, 12, pp: 353-357 (2010.12.10, Elsevier, The Netherlands) [1566-1199]
- SCI1) Y. K. Lee, S. K. Kwon, T. J. Park, W. S. Jeon, J. J. Park, S. Y. Kim, J. H. Kwon and J. Jang, "Spontaneous patterning of polymer film by teflon thin film and spin coating for polymer light-emitting diode", Mol. Cryst. Liq. Cryst., 498, pp: 214-221 (2009.01.01, Taylor & Francis, USA) [1542-1406]
- SCI2) J. H. Cheon, W. G. Lee, T. H. Lim and J. Jang, "Hydrogenated amorphous silicon thin-film transistors on freestanding graphite foil", Electrochemical and Solid-State Letters, 12(3), pp: J25-J28 (2009.01.01, ECS, USA) [1099-0062]
- SCI3) J. H. Oh, D. H. Kang, M. K. Park and J. Jang, "Low off-state drain current poly-Si TFT with Ni-mediated crystallization of ultrathin a-Si", Electrochemical and Solid-State Letters, 12(3) pp: J29-J32 (2009.01.06, ECS, USA) [1099-0062]
- SCI4) J. H. Cheon, S. H. Park, M. H. Kang, J. Jang, S. E. Ahn, J. Cites, C. K. Williams and C. C. Wang, "Ultrathin Si thin-film transistor on glass", IEEE Electron Devices Letters, 30(2), pp: 145-147 (2009.01.28, IEEE, USA) [0741-3106]
- SCI5) J. H. Cheon, W. G. Lee, S. H. Kim, J. Jang and P. Kumer, "An a-Si:H TFT manufactured on an ultra-thin Mo foil", J. of Korean Physical Society, 54(1), pp: 427-431 (2009.01., KPS, Korea) [0374-4884]
- SCI6) Y. Djeridane, P. R. i Cabarrocas, K. H. Kim, S. H. Kim, J. H. Bae, J. Y. Jeong and J. Jang, "Fabrication and characterization of ion-doped p-type nanocrystalline silicon thin-film transistors", J. of Korean Physical Society, 54(1), pp: 437-440 (2009.01, KPS, Korea) [0374-4884]
- SCI7) K. S. Kim, J. H. Ryu, C. S. Lee, J. Jang and K. C. Park, “Enhanced and stable electron emission of carbon nanotube emitter arrays by post-growth hydrofluoric acid treatment”, J. Mater. Sci.: Mater. Electron, 20(1), pp: S120-S124 (2009.01, Springer, The Netherlands) [0957-4522]
- SCI8) J. H. Oh, D. H. Kang, W. H. Park, J. Jang, Y. J. Chang, J. B. Choi and C. W. Kim, "A center-offset polycrystalline-silicon thin-film transistor with n+ amorphous-silicon contacts", IEEE Electron Device Letters, 30(1), pp: 36-38 (2009.01, IEEE, USA) [0741-3106]
- SCI9). C. Avis, S. H. Kim, K. H. Kim, J. Jang, S. J. Hong, Y. D. Nam and J. H. Hur, “B-ion doping effect in ZnO thin film”, J. of the Korean Physical Society, 54(1), pp: 535-538 (2009.01, The Korean Physical Society, Korea) [0374-4884]
- SCI10) J. J. Park, T. J. Park, W. S. Jeon, R. Pode, J. Jang, J. H. Kwon, E. S. Yu and M. Y. Chae, “Small molecule interlayer for solution processed phosphorescent organic light emitting device”, Organic Electronics, 10, pp: 189-193 (2009.02.01, Elsevier, The Netherlands) [1566-1199]
- SCI11) J. J. Park, T. J. Park, W. S. Jeon, S. Y. Kim, Y. K. Lee, J. Jang and J. H. Kwon, "White polymeric light-emitting diodes based on doping of an orange Ir complex in a fluorene blue polymer host", Mol. Cryst. Liq. Cryst., 498, pp: 290-297 (2009.02.25, Taylor & Francis,) [1542-1406]
- SCI12) C. H. Kim, S. H. Kim, S. H. Lee, M. H. Choi, T. W. Jeon and J. Jang, "Bimoloecular recombination in solution-processed 6, 13-bis(penthylphenylethynyl) pentacene thin-film transistor", Applied Physics Letter, 94, pp: 083308/1-3 (2009.02.26, AIP, USA) [0003-6951]
- SCI13) K. H. Kim and J. Jang, "Ni behaviors in polycrystalline silicon with disk-shaped grains", Journal of Crystal Growth, 311(6), pp: 1493-1495 (2009.03.01, Elsevier, The Netherlands) [0022-0248]
- SCI14) M. H. Choi, S. H. Han, S. H. Lee, D. J. Choo, J. Jang and S. K. Kwon, "Effect of active layer thickness on environmental stability of printed thin-film transistor", Organic Electronics, 10(3), pp: 421-425 (2009.03.01, Elsevier, The Netherlands) [1566-1199]
- SCI15) S. Manivannan, I. O. Jeong, J. H. Ryu, C. S. Lee, K. S. Kim, J. Jang and K. C. Park, “Dispersion of single-walled carbon nanotubes in aqueous and organic solvents through a polymer wrapping functionalization”, J. Mater. Sci: Mater. Electron., 20(3), pp: 223-229 (2009.03, Springer, The Netherlands) [0957-4522]
- SCI16) S. K. Jeon, J. G. Lee, E. H. Park, J. Jang, J. G. Lim, S. K. Kim and J. S. Park, "The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties", Applied Physics Letters, 94, pp: 131106/1-2 (2009.04.01, AIP, USA) [0003-6951]
- SCI17) W. S. Jeon, T. J. Park, S. Y. Kim, R. Pode, J. Jang and J. H. Kwon, “Ideal host and guest system in phosphorescent OLEDs”, Organic Electronics, 10, pp: 240-246 (2009.04.01, Elsevier, The Netherlands) [1566-1199]
- SCI18) S. Y. Kim, W. S. Jeon, T. J. Park, R. Pode, J. Jang and J. H. Kwon, “Low voltage efficient simple p-i-n type electrophosphorescent green organic light-emitting devices”, Applied Physics Letters, 94, pp: 133303/1-3 (2009.04.02, AIP, USA) [0003-6951]
- SCI19) J. J. Park, S. T. Lee, T. J. Park, W. S. Jeon, J. Jang, J. H. Kwon and R. Pode, “Stable efficiency roll-off in solution-processed phosphorescnet green organic light-emitting diodes”, J. of the Korean Physical Society, 55(1), pp: 327-330 (2009.07.01, KPS, Korea) [0374-4884]
- SCI20) G. J. Lee, Y. P. Lee, S. S. Kim, H. S. Cheong, C. S. Yoon, Y. D. Son and J. Jang, "Effect of post thermal annealing on femtosecond laser crystallization of 500-mm-thick amorphous silicon films", J. of the Korean Physical Society, 55(1), pp: 50-54 (2009.07, The Korean Physical Soc., Korea) [0374-4884]
- SCI21) C. Avis, S. H. Kim, J. H. Hur, J. Jang and S. J. Hong, "Effect of DC power on the structural and the electrical properties of B-ion-doped ZnO films", J. of the Korean Physical Society, 55(1), pp: 255-258 (2009.07, The Korean Physical Soc., Korea) [0374-4884]
- SCI22) C. Avis, S. H. Kim, J. H. Hur, J. Jang and W. I. Milne, "Coplanar ZnO thin-film transistor using boron ion doped source/drain contacts", Electrochemical and Solid-State Letters, 12(10), pp: J93-J95 (2009.07.22, The Electrochemical Society, USA) [1099-0062]
- SCI23) D. H. Kang, B. S. Oh, M. K. Park, J. H. Oh, Y. J. Chang, J. B. Choi, C. W. Kim and J. Jang, "Reduction of leakage currents in bottom-gate N-channel metal-induced crystallization through a cap layer polycrystalline silicon thin-film transistors by applying off-bias stress", Japanese Journal of Applied Physics, 48, pp: 08HK01/1-3 (2009.08.20, The Japan Society of Applied Physics, Japan) [0021-4922]
- SCI24) J. H. Youn, Y. I. Lee, H. T. Moon, T. J. Park, W. S. Jeon, J. H. Kwon and J. Jang, "Study on the transient electroluminescence of phosphorescent OLEDs", J. of the Korean Physical Society, 55(3), pp: 1111-1114 (2009.09, The Korean Physical Society, Korea) [0374-4884]
- SCI25) T. J. Park, W. S. Jeon, S. Y. Kim, J. H. Kwon and J. Jang, "A new organic memory made of an organic semiconductor superlattice", J. of the Korean Physical Society, 55(3), pp: 1115-1118 (2009.09, The Korean Physical Society, Korea) [0374-4884]
- SCI26) T. J. Park, W. S. Jeon, J. W. Choi, R. Pode, J. Jang and J. H. Kwon, “Efficient multiple tripet quantum well structures in organic light-emitting devices”, Applied Physics Letters, 95, pp: 103303/1-3 (2009.09.09, AIP, USA) [0003-6951]
- SCI27) Y. S. Lee, J. H. Ryu, H. E. Lim, J. W. Lim, B. T. Son, J. U. Kim, J. Jang and K. C. Park, “X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process”, Vacuum, 84(5), pp: 523-525 (2009.12.10, Elsevier, The Netherlands) [0042-207X]
- SCI28) H. E. Lim, N. Y. Song, J. H. Ryu, J. W. Lim, B. T. Son, Y. S. Lee, J. Jang and K. C. Park, “Electron emission properties of CNT arrays grown with micro-molding in capillary(MIMIC) assisted process”, Vacuum, 84(5), pp: 526-529 (2009.12.10, Elsevier, The Netherlands) [0042-207X]