경희대 장진 교수님 IDW 2016에서 초청 논문 2편 발표 |
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23rd International Display Workshops (IDW 2016)에서 초청 2편 발표 Section (AMD2): Oxide TFT: High-Performance TFTs Invited Paper : High Yield, High Drain Current Oxide TFTs for Display Manufacturing We report the high drain current amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with excellent performance uniformity by using bulk accumulation (BA) mode. The high performance BA-TFTs could be applied to high yield and fast response integrated gate drivers for AMOLED and AMLCD Section (MEET4): EL Quantum Dots Technologies Invited Paper : Tandem QLED with Oxide Charge Generation Junction This paper reviews the solution-processed charge generation junctions (CGJs) which can be used for single and tandem quantum-dot light emitting diodes (QLEDs) and organic light emitting diodes (OLEDs). Organic charge-generation layer by thermal evaporation, solution processed charge-generation junction and tandem QLED with oxideoxide CGJ is introduced. |